Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-30T02:52:01.788Z Has data issue: false hasContentIssue false
  • English
  • Français

Semiconducting Polymer and Hydrogenated Amorphous Silicon Heterojunction Solar Cells

Published online by Cambridge University Press:  12 July 2011

A. R. Middya  and
Eric A. Schiff
A. R. Middya
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244 - 1130
Eric A. Schiff
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244 - 1130
Get access

Abstract

In this work, we report on investigation of p-type semiconducting polymer, {poly(3,4 polyethylenedioxythiophene)-poly(styrenesulfonate)} (PEDOT:PSS) as the p-layer in NIP and PIN hydrogenated amorphous silicon (a-Si:H) solar cells. The rectification ratio of solution-casted diode is ∼ 10, it increases to 3×104 when PEDOT:PSS is deposited by Spin Coating technique. We observed additional photovoltaic effect when light is illuminated through polymer side. So far, best solar cells characteristics observed for PEDOT:PSS/a-Si:H hybrid solar cells are Voc ≈ 720 mV and Jsc ≈ 1 - 2 mA/cm2.

Keywords

polymerSiphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a05-06
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Guha, S. and Yang, J., J. Non-Crystalline Solids 352, 1917 (2006).10.1016/j.jnoncrysol.2006.01.048Google Scholar
2. Jiang, L., Lyou, J. H., Rane, S., Schiff, E. A., Wang, Q., and Yuan, Q., in Amorphous and Heterogeneous Films - 2000, edited by Branz, H. M., Collins, R. W., Guha, S., Okamoto, H., and Stutzmann, M.(Mat. Res. Soc. Symp. Proc. 609, Pittsburgh, PA, 2001), pp. A18.3.1–A18.3.12.Google Scholar
3. Brown, T. M., Kim, J. S., Friend, R. H., Caciali, F., Daik, R. and Feast, W. J., Appl. Phys. Letts. 75, 1679 (1999).Google Scholar
4. Gransstroem, M., Patrisch, K., Arias, A. C., Lux, A., Andersson, M. R. and Friend, R. H., Nature 395, 257 (1008).10.1038/26183Google Scholar
5. Williams, E. L., Jabbour, G. E., Wang, Q., Shaheen, S. E., Gingley, D. S. and Schiff, E. A., Appl. Phys. Letts. 87, 223504 (2005).10.1063/1.2136409Google Scholar
6. Wang, W. and Schiff, E. A., Appl. Phys. Letts. 91, 133504 (2007).10.1063/1.2789785Google Scholar
7. Pasquiera, A. D., Mastrogiovanni, D. D. T., Klein, L. A., Wang, T., Garfunkel, E., Appl. Phys. Letts. 91, 183501 (2007).10.1063/1.2801554Google Scholar