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Self-Aligned Solution-Processed Zinc-Tin Oxide Thin-Film Transistors with High-K Solution-Processed Gate Dielectric

Published online by Cambridge University Press:  17 April 2019

Chen-Guan Lee ,
Soumya Dutta  and
Ananth Dodabalapur
Chen-Guan Lee
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, USA
Soumya Dutta
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, USA
Ananth Dodabalapur
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, USA
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Abstract

We demonstrate high performance zinc-tin oxide (ZTO) thin-film transistors (TFTs) with low operation voltage, small channel length and low parasitic capacitance. Both the zinc tin oxide and the high-k dielectric, ZrO2, were solution processed by sol-gel methods. A self-aligned process was employed to minimize the parasitic capacitance. The transistors with a channel length of 8 μm operate at 5 V and have a saturation mobility of 2.5 cm2/V·s and an on/off ratio of 5.9×106. Gate-induced surface relief has been found to have strong effect on the performance of the active layer.

Keywords

sol-gelelectronic materialelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1247: Symposium C – Solution Processing of Inorganic and Hybrid Materials for Electronics and Photonics , 2010 , 1247-C06-02
Copyright
Copyright © Materials Research Society 2010

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References

1. Kim, D., Jeong, Y., Song, K., Park, S. K., Cao, G. Z. and Moon, J., Langmuir 25, 11149–11154 (2009).Google Scholar
2. Park, S. K., Kim, Y. H. and Han, J. I., J. Phys. D: Appl. Phys. 42 (2009).Google Scholar
3. Chang, Y. J., Lee, D. H., Herman, G. S. and Chang, C. H., Electrochemical and Solid State Letters 10, H135-H138 (2007).Google Scholar
4. Park, S. K., Kim, Y. H., Kim, H. S. and Han, J. I., Electrochem. Solid State Lett. 12, H256- H258 (2009).Google Scholar
5. Seo, S. J., Choi, C. G., Hwang, Y. H. and Bae, B. S., J. Phys. D: Appl. Phys. 42 (2009).Google Scholar
6. Kim, H. S., Kim, M. G., Ha, Y. Q., Kanatzidis, M. G., Marks, T. J. and Facchetti, A., J. Am. Chem. Soc. 131, 10826-+ (2009).Google Scholar
7. Pal, B. N., Dhar, B. M., See, K. C. and Katz, H. E., Nat. Mater. 8, 898–903 (2009).Google Scholar