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Self Annealing Ion Implantation in thin Silicon Films

Published online by Cambridge University Press:  26 February 2011

J. D. Rubio
Affiliation:
Department of Nuclear Engineering, Texas A&M University, College Station, TX 77843
R. P. Vijay
Affiliation:
Department of Nuclear Engineering, Texas A&M University, College Station, TX 77843
R. R. Hart
Affiliation:
Department of Nuclear Engineering, Texas A&M University, College Station, TX 77843
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Abstract

The self annealing phenomenon was studied utilizing 1 cm diameter, 1 μm thick, <100> oriented silicon films. Previous results established the viability of the self annealing process for medium energy argon beams incident on similar targets [1]. In the current work, doubly aligned backscatter spectra were obtained to improve the sensitivity of the residual lattice damage measurements. In addition, some implantations were performed at elevated temperatures to independently determine the effect of the flux and the sample temperature on the self annealing process. The results showed strong correlations between the implantation flux, sample temperature and the residual lattice damage. Two distinct temperature regions were observed above and below 330 °C with corresponding activation energies of 1.5 eV and 0.1 eV.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

1. Rubio, J.D., Vijay, R.P., Hart, R.R. and Pearce, J.D., Mat. Res. Soc. Symp. 128 (1989) 575.Google Scholar
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