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Self- and Dopant Diffusion in Extrinsic Boron Doped Isotopically Controlled Silicon Multilayer Structures

Published online by Cambridge University Press:  01 February 2011

Ian D. Sharp ,
Hartmut A. Bracht ,
Hughes H. Silvestri ,
Samuel P. Nicols ,
Jeffrey W. Beeman ,
John L. Hansen ,
Arne Nylandsted Larsen  and
Eugene E. Haller
Ian D. Sharp
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Hartmut A. Bracht
Affiliation:
Institut für Materialphysik, Universität Münster, D 48149 Münster, Germany
Hughes H. Silvestri
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Samuel P. Nicols
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Jeffrey W. Beeman
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
John L. Hansen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, DK 8000 Aarhus, Denmark
Arne Nylandsted Larsen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, DK 8000 Aarhus, Denmark
Eugene E. Haller
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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Abstract

Isotopically controlled silicon multilayer structures were used to measure the enhancement of self- and dopant diffusion in extrinsic boron doped silicon. 30Si was used as a tracer through a multilayer structure of alternating natural Si and enriched 28Si layers. Low energy, high resolution secondary ion mass spectrometry (SIMS) allowed for simultaneous measurement of self- and dopant diffusion profiles of samples annealed at temperatures between 850°C and 1100°C. A specially designed ion-implanted amorphous Si surface layer was used as a dopant source to suppress excess defects in the multilayer structure, thereby eliminating transient enhanced diffusion (TED) behavior. Self- and dopant diffusion coefficients, diffusion mechanisms, and native defect charge states were determined from computer-aided modeling, based on differential equations describing the diffusion processes. We present a quantitative description of B diffusion enhanced self-diffusion in silicon and conclude that the diffusion of both B and Si is mainly mediated by neutral and singly positively charged self-interstitials under p-type doping. No significant contribution of vacancies to either B or Si diffusion is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F13.11
Copyright
Copyright © Materials Research Society 2002

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References

[1] Peart, R.F., Phys. Stat. Sol. 15 K119 (1966).Google Scholar
[2] Masters, B.J. and Fairfield, J.M., Appl. Phys. Lett. 8 280 (1960)Google Scholar
[3] Fairfield, J.M. and Masters, B.J., J. Appl. Phys. 38 3148 (1967)Google Scholar
[4] Mayer, H.J., Mehrer, H., and Maier, K., Inst. Phys. Conf. Ser. 31 186 (1977)Google Scholar
[5] Bracht, H., Haller, E.E., and Clark-Phelps, R., Phys. Rev. Lett. 81 393 (1998)Google Scholar
[6] Ural, A., Griffin, P.B., and Plummer, J.D., Phys. Rev. Lett. 83 3454 (1999)Google Scholar
[7] NakaBayashi, Y., Osman, H.J., Segawa, T., Saito, K., Matsumoto, S., Murota, J., Wada, K., and Abe, T., Jpn. J. Appl. Phys. 39 1133 (2000)Google Scholar
[8] Ural, A., Griffin, P.B., and Plummer, J.D., Appl. Phys. Lett. 79 4328 (2001)Google Scholar
[9] Shockley, W. and Moll, J.L., Phys. Rev. 119 1480 (1960)Google Scholar
[10] Eaglesham, D.J., Stolk, P.A., Gossman, H.-J., and Poate, J.M., Appl. Phys. Lett. 65 2305 (1994)Google Scholar
[11] Fahey, P.M., Griffin, P.B., and Plummer, J.D., Reviews of Modern Physics, 61 289 (1989)Google Scholar
[12] Jüngling, W., Pichler, P., Selberherr, S., Guerro, E., and Pötzl, H. W., IEEE Trans. Electron. Devices ED 32 156 (1985)Google Scholar
[13] Cowern, N.E.B., Theunuissen, M.J.J., Roozeboom, F., and Berkum, J.G.M. van, App. Phys. Lett. 75 181 (1999)Google Scholar
[14] Sadigh, B., Lenosky, T.J., Theiss, S.K., Caturla, M.J., Rubia, T. Diaz de la, and Foad, M.A., Phys. Rev. Lett. 83 4341 (1999)Google Scholar
[15] Windl, W., Bunea, M.M., Stumpf, R., Dunham, S.T., and Masquelier, M.P., Phys. Rev. Lett. 83 4345 (1999)Google Scholar
[16] Antoniadis, D.A., Gonzalez, A.G., and Dutton, R.W., J. Electrochem. Soc. 125 813 (1978)Google Scholar
[17] Silvestri, H.H. et al., these proceedings.Google Scholar