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Selective Nucleation of Diamond Crystals on the Apex of Silicon Pyramids

Published online by Cambridge University Press:  25 February 2011

R. Ramesham  and
C. Ellis
R. Ramesham
Affiliation:
Electrical Engineering Department Alabama Microelectronics Science and Technology, Center Auburn University, AL 3 6849–5201
C. Ellis
Affiliation:
Electrical Engineering Department Alabama Microelectronics Science and Technology, Center Auburn University, AL 3 6849–5201
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Abstract

Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. Nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches were analyzed by scanning electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 69
Copyright
Copyright © Materials Research Society 1992

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References

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