Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T17:55:17.491Z Has data issue: false hasContentIssue false
  • English
  • Français

Selective Growth of Polycrystalline Diamond Thin Films

Published online by Cambridge University Press:  22 February 2011

R. Ramesham
R. Ramesham*
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, Auburn, AL 36849–5201
Get access

Abstract

Microwave plasma assisted CVD is employed to grow diamond films using a gas mixture of H2 and CH4on various substrates. Diamond has a tendency not to nucleate growth on mirror-smooth finished substrates irrespective of the substrate type (except single crystal diamond). We have developed various processes to enhance the nucleation density of the diamond substantially by damaging or seeding the surface of the substrates. Several process techniques such as 1. silicon nitride and silicon dioxide process, 2. ultrasonic agitation process, 3. selective seeding of diamond by electroplating of Cu, 4. patterning of diamond films by air-microwave plasma etching, etc., were developed to achieve the patterns of diamond on various substrates. Selective growth of doped diamond and low temperature growth of diamond for microelectronic applications have also been achieved by using the above processes (1 and 2). Details on selective diamond growth processes and the morphology of as-deposited selective diamond by SEM are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 703
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Angus, J.C. and Hayman, C.C., Science, 241, 913 (1988).Google Scholar
2. Zhu, W., Stoner, B.R., Williams, B.E., and Glass, J.T., Proc. of the IEEE, 79, 621 (1991).Google Scholar
3. Gildenblat, G. Sh., Grot, S.A., Badzian, A., Proc. of the IEEE, 79, 647 (1991).Google Scholar
4. Mitsuda, K., Kojima, Y., Yoshida, T., and Akashi, K., J. Mater. Sci., 22, 1557 (1987).Google Scholar
5. Chang, C.P., Flamm, D.L., Ibbotson, D.E., and Mucha, J.A., J. Appl. Phys., 63, 1744 (1988).Google Scholar
6. Hirabayashi, K., Taniguchi, Y., Takamatsu, O., Ikeda, T., Ikoma, K., and Kurihara, N.I., Appl. Phys. Lett., 53, 1815 (1988).Google Scholar
7. Ma, J.S., Kawarada, H., Yonehara, T., Suzuki, J.I., Yokota, Y., and Hiraki, A., Appl. Phys. Lett., 55, 1071 (1989).Google Scholar
8. Inoue, T., Tachibana, H., Kumagai, K., Miyata, K., Nishimura, K., Kobashi, K., and Nakaue, A., J. Appl. Phys., 67, 7329 (1990).Google Scholar
9. Valdes, J.L., Mitchel, J.W., Mucha, J.A., Seibles, L., and Huggins, H., J. Electrochem. Soc., 138, 635 (1991).Google Scholar
10. Masood, A., Aslam, M., Tamor, M.A., and Potter, T.J., J. Electrochem. Soc., 138. L67 (1991).Google Scholar
11. von Windhiem, J.A. and Glass, J.T., J. Mater. Res., 7, 2144 (1992).Google Scholar
12. Lin, S.J., Lee, S.L., Hwang, J., Lin, T.S., J. Electrochem. Soc., 139, 3255 (1992).Google Scholar
13. Davidson, J.L., Ellis, C., and Ramesham, R., J. Electron. Mater., 18, 711 (1989).Google Scholar
14. Ramesham, R., Roppel, T., Hajek, B.F., Ellis, C., and Loo, B.H, in “New Diamond Science and Technology,” edited by Messier, R., Glass, J.T., Butler, J.E., Roy, R., Materials Research Society, Pittsburgh, Pennsylvania, Vol. NDST-2 (1991) p. 943.Google Scholar
15. Ramesham, R., Rose, F.M., and Allerman, A., Diamond and Related Materials, 01, 907 (1992).Google Scholar
16. Ramesham, R. and Roppel, T., J. Mater. Res., 7, 1144 (1992).Google Scholar
17. Ramesham, R., Ellis, C., Roppel, T., Jaworske, D.A., and Baugh, W., J. Mater. Res., 6, 1278 (1991).Google Scholar
18. Ramesham, R., Roppel, T., Johnson, R.W., and Chang, J.M., Thin Solid Films, 212, 96 (1992).Google Scholar
19. Ramesham, R. and Loo, B.H., J. Electrochem. Soc., 139, 1988 (1992).Google Scholar
20. Ramesham, R., Ellis, C., and Roppel, T., “Low temperature selective deposition of diamond thin films,” Springer Proceedings in Physics, Volume 56 on Amorphous and Crystalline Silicon Carbide III, Edited by Harris, G.L., Spencer, M.G., and Yang, C.Y, 1992, p. 345, Springer-Verlag, Heidelberg, Germany.Google Scholar
21. Ramesham, R., Roppel, T., Ellis, C., and Loo, B.H., J. Electrochem. Soc., 138, 2981 (1991).Google Scholar
22. Ramesham, R. and Ellis, C., J. Mater. Res., 7, 1189 (1992).Google Scholar