Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Linthicum, K.J.
Gehrke, T.
Thomson, D.B.
Tracy, K.M.
Carlson, E.P.
Smith, T. P.
Zheleva, T.S.
Zorman, C.A.
Mehregany, M.
and
Davis, R.F.
1998.
Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques.
MRS Proceedings,
Vol. 537,
Issue. ,
Davis, Robert F.
Nam, O-H.
Zheleva, T. S.
Bremser, M. D.
Linthicum, K. J.
Gehrke, T.
Rajagopal, P.
Thomson, D. B.
and
Carlson, E. P.
1998.
Growth and Characterization of GaN and ALxGA1−xN Thin Films Achieved Via Lateral- and/or Pendeo-Epitaxial Overgrowth on 6H-SIC(0001) Substrates.
MRS Proceedings,
Vol. 535,
Issue. ,
Linthicum, K.J.
Gehrke, T.
Thomson, D.B.
Tracy, K.M.
Carlson, E.P.
Smith, T. P.
Zheleva, T.S.
Zorman, C.A.
Mehregany, M.
and
Davis, R.F.
1999.
Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 4,
Issue. S1,
p.
477.
Davis, Robert F.
Gehrke, T.
Linthicum, K.J.
Zheleva, T. S.
Rajagopal, P.
Zorman, C. A.
and
Mehregany, M.
1999.
Pendeo-Epitaxial Growth and Characterization of GaN and Related Materials on 6H-SiC(0001) and Si(111) Substrates.
MRS Proceedings,
Vol. 595,
Issue. ,
Gehrke, Thomas
Linthicum, Kevin J.
Preble, Edward
Rajagopal, Pradeep
Ronning, Carsten
Zorman, Christian
Mehregany, Mehran
and
Davis, Robert F.
2000.
Pendeo-epitaxial growth of gallium nitride on silicon substrates.
Journal of Electronic Materials,
Vol. 29,
Issue. 3,
p.
306.
Davis, Robert F.
Gehrke, T.
Linthicum, K.J.
Zheleva, T. S.
Rajagopal, P.
Zorman, C. A.
and
Mehregany, M.
2000.
Pendeo-epitaxial Growth and Characterization of GaN and related Materials on 6H-SiC(0001) and Si(111) Substrates.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 5,
Issue. S1,
p.
49.
Yang, Min
Cho, Meoungwhan
Kim, Chinkyo
Yi, Jaehyung
Jeon, Jina
Khym, Sungwon
Kim, Minhong
Choi, Yoonho
Leem, Shi-Jong
and
Lee, Yong-Hee
2001.
A selective growth of III-nitride by MOCVD for a buried-ridge type structure.
Journal of Crystal Growth,
Vol. 226,
Issue. 1,
p.
73.
Davis, Robert F.
Gehrke, T
Linthicum, K.J.
Rajagopal, P
Roskowski, A.M.
Zheleva, T.
Preble, Edward A.
Zorman, C.A.
Mehregany, M.
Schwarz, U.
Schuck, J.
and
Grober, R.
2001.
Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 6,
Issue. ,
Davis, Robert F.
Gehrke, T.
Linthicum, K.J.
Zheleva, T.S.
Preble, E.A.
Rajagopal, P.
Zorman, C.A.
and
Mehregany, M.
2001.
Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization.
Journal of Crystal Growth,
Vol. 225,
Issue. 2-4,
p.
134.
Hanser, Drew
Liu, Lianghong
Preble, Edward A.
Thomas, Darin
and
Williams, Mark
2003.
Growth and Fabrication of 2 inch Free-standing GaN Substrates via the Boule Growth Method.
MRS Proceedings,
Vol. 798,
Issue. ,