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Selective Growth of GaAs and A1xGa1−xas by Omvpe Using Tertiarybutylarsine

Published online by Cambridge University Press:  25 February 2011

K. L. Tokuda ,
D. W. Kisker ,
M. Lamont-Schnoes  and
J. Lopata
K. L. Tokuda
Affiliation:
AT&T Bell Laboratories, Crawfords Comer Road, Holmdel, NJ 07733-1988
D. W. Kisker
Affiliation:
AT&T Bell Laboratories, Crawfords Comer Road, Holmdel, NJ 07733-1988
M. Lamont-Schnoes
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974-2070
J. Lopata
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974-2070
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Abstract

We have investigated the use of tertiarybutylarsine (TBAs) to selectively grow GaAs and AlxGa1−x As in trenches on partially-masked GaAs substrates. Both SiyNz and Si02 masks have been used, with geometries ranging from 4 - 160 μm. By varying temperature and pressure, we have optimized selectivity and minimized “ridge” growth near masked areas. The results show TBAs may be a suitable alternative to arsine for selective regrowth of these materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 111
Copyright
Copyright © Materials Research Society 1991

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References

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