The patterned Zn nucleation and the ZnS growth onto the Zn seeds on a thermal oxidized silicon substrate was demonstrated at room temperature with the excimer laser chemical vapor deposition method.

The formation of ZnS films was realized by the method based on the two—step process consisting of the nucleation and the subsequent ZnS growth. In the nucleation, a gaseous dimethylzinc was sealed in a reaction chamber and was then evacuated immediately. Then, the substrate surface which was uniformly adsorbed by dimethylzinc molecules was exposed with a single shot irradiation of a patterned KrF laser; Zn seeds were created only on the irradiated parts by a photodecomposition. And the subsequent growth of ZnS was performed by the parallel or perpendicular irradiation methods. As a result, in the perpendicular irradiation method, the high selectivity and crystallinity of the film were performed by irradiating the whole substrate surface with very low fluence of the KrF laser such as 3 mJ/cm2.