No CrossRef data available.
Article contents
Selective Chemical Vapour Deposition of Tungsten Using SiH4/WF6 Chemistry
Published online by Cambridge University Press: 21 February 2011
Abstract
The effect of deposition temperature and SiH4/WF6 flow ratio on the resistivity and impurity content of SiH4/WF6 tungsten films has been investigated. It is found that low deposition temperatures and high SiH4/WF6 ratios result in films with a high resistivity up to 150 μΩcm, whereas films deposited at high temperatures have a resistivity of 9 μΩcm. From Electron Probe Micro Analysis and Auger Electron Spectroscopy we conclude that the resistivity increase is due to silicon which is incorporated in the tungsten film during deposition. This results in a resistivity increase of 20 to 40 μΩcm per at% Si.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1990