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Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (Elo) of GaN Using Tungsten Mask

Published online by Cambridge University Press:  15 February 2011

Yasutoshi Kawaguchi ,
Shingo Nambu ,
Hiroki Sone ,
Masahito Yamaguchi ,
Hideto Miyake ,
Kazumasa Hiramatsu ,
Nobuhiko Sawaki ,
Yasushi Iyechika  and
Takayoshi Maeda
Yasutoshi Kawaguchi
Affiliation:
Department of Electronics, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan
Shingo Nambu
Affiliation:
Department of Electronics, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan
Hiroki Sone
Affiliation:
Department of Electronics, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan
Masahito Yamaguchi
Affiliation:
Department of Electronics, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan
Hideto Miyake
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama-cho, Tsu, Mie, 514-8507, Japan
Kazumasa Hiramatsu
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama-cho, Tsu, Mie, 514-8507, Japan
Nobuhiko Sawaki
Affiliation:
Department of Electronics, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan
Yasushi Iyechika
Affiliation:
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd, 6 Kitahara, Tsukuba, Ibaraki, 300-3294, Japan
Takayoshi Maeda
Affiliation:
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd, 6 Kitahara, Tsukuba, Ibaraki, 300-3294, Japan
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Abstract

Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten (W) mask by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) have been studied. The selectivity of the GaN growth on the W mask as well as the SiO2 mask is excellent for both MOVPE and HVPE. The ELO-GaN layers are successfully obtained by HVPE on the stripe patterns along the <1100> crystal axis with the W mask as well as the SiO2 mask. There are no voids between the SiO2 mask and the overgrown GaN layer, while there are triangular voids between the W mask and the overgrown layer. The surface of the ELO-GaN layer is quite uniform for both mask materials. In the case of MOVPE, the structures of ELO layers on the W mask are the same as those on the SiO2 mask for the <1120> and <1100> stripe patterns. No voids are observed between the W or SiO2 mask and the overgrown GaN layer by using MOVPE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G4.1
Copyright
Copyright © Materials Research Society 1999

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