Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-29T07:47:54.084Z Has data issue: false hasContentIssue false
  • English
  • Français

Selective Aluminum CVD on Si(100) From DMAH

Published online by Cambridge University Press:  15 February 2011

C. Bisch ,
S. Rogge ,
T. Mélin  and
G.C.A.M. Janssen
C. Bisch
Affiliation:
Delft University of Technology, Dept. of Applied Physics, DIMES, Delft, THE NETHERLANDS, e-mail:[email protected]
S. Rogge
Affiliation:
Delft University of Technology, Dept. of Applied Physics, DIMES, Delft, THE NETHERLANDS
T. Mélin
Affiliation:
Delft University of Technology, Dept. of Applied Physics, DIMES, Delft, THE NETHERLANDS
G.C.A.M. Janssen
Affiliation:
Delft University of Technology, Dept. of Applied Physics, DIMES, Delft, THE NETHERLANDS
Get access

Abstract

The influence of the dose on the crystal growth and on the selectivity of the Al-CVD process has been studied. Doses were varied from 100 L to 18000 L. Selective deposition was observed, both on passivated Si vs. SiO2, as well as on bare Si vs. passivated Si. On oxide elongated crystals have been deposited with dimensions of 1200 × 60 × 60 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 580: Symposium E – Nucleation & Growth Processes in Materials , 1999 , 141
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Tsubouchi, K., Masu, K., Shigeeda, N., Matano, T., Hiura, Y. and Mikoshiba, N., Appl.Phys.Lett. 57, 221 (1990)Google Scholar
2 Tsubouchi, K., Masu, K., J.Vac.Sci.Technol.A 10 (4), 856 (1992)Google Scholar
3 Bisch, C., Boellaard, E., Janssen, G.C.A.M., Alkemade, P.F.A., Radelaar, S., Thin Solid Films 336, 84 (1998)Google Scholar
4 Shen, T.-C., Wang, C. and Tucker, J.R., Appl. Surf. Sci. 141, 228 (1999)Google Scholar
5 Mitsui, T., Hill, E. and Ganz, E., J. Appl. Phys. 85, 522 (1999)Google Scholar
6 Rogge, S. (unpublished work)Google Scholar