Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-18T10:10:40.947Z Has data issue: false hasContentIssue false
  • English
  • Français

Seeding Solid Phase Crystallization of Amorphous Silicon Films with Embedded Nanocrystals

Published online by Cambridge University Press:  01 February 2011

Curtis Anderson  and
Uwe Kortshagen
Curtis Anderson
Affiliation:
[email protected], University of Minnesota, Department of Mechanical Engineering, 111 Church St. S.E., Minneapolis, MN, 55455United States
Uwe Kortshagen
Affiliation:
[email protected], University of Minnesota, Department of Mechanical Engineering, 111 Church St. S.E., Minneapolis, MN, 55455, United States
Get access

Abstract

Silicon nanocrystals with diameters up to 30 nm are used as nucleation seeds for fast solid phase crystallization of amorphous silicon films. Purely amorphous films required an incubation time of up to 12 hours at 600°C prior to the onset of nucleation, while films with nanocrystals embedded between layers of amorphous silicon grew immediately upon annealing in a quartz tube furnace. Structural characterization was performed by heated-stage transmission electron microscopy and Raman spectroscopy.

Keywords

Sicrystal growthphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A06-14
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. www.eia.doe.gov,Google Scholar
2. Green, M.A. Emery, K. Hisikawa, Y. Warta, W. Prog. Photovolt: Res. Appl., 15 (2007) 425–430 Google Scholar
3. Campbell, S. A. (2001). The Science and Engineering of Microelectronics Fabrication. New York, Oxford University Press.Google Scholar
4. Jiang, Y.L. Chang, Y.C. Thin Solid Films, 500 (2006) 316–321 Google Scholar
5. Mahan, A. H., Roy, B. Jr. Reedy, R. C. Readey, D. W., Ginley, D. S., J. Appl. Phys., 99 (2006) 023507.Google Scholar
6. Iverson, R. B., Reif, R. J. Appl. Phys., 62 (1987) 1675–1681 Google Scholar
7. Kuo, C.C. Yeh, W.C. Lee, J.F. Jeng, J.W. Thin Solid Films, 515 (2007) 8094–8100 Google Scholar
8. Ishikawa, Y. Nakamura, A. Uraoka, U. Fuyuki, T. Jpn. J. Appl. Phys., 43 (2004) 877–881 Google Scholar
9. Lee, S.R. Ahn, K.M. Ahn, B.T. J. Electrochem. Soc., 154 (2007) H778–H781.Google Scholar
10. Bapat, A. Anderson, C. Perrey, C.R. Carter, C.B. Campbell, S.A. Kortshagen, U. Plasma Phys. Control. Fusion, 46 (2004) B97–B109.Google Scholar