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Seebeck Coefficient of Nanolayer Growth of Anatase TiO2-x/Al-foil by Atomic Layer Deposition

Published online by Cambridge University Press:  18 April 2013

Matthew Chamberlin ,
Renee E. Ahern  and
Costel Constantin
Matthew Chamberlin
Affiliation:
Department of Physics and Astronomy, James Madison University, Harrisonburg, VA 22807
Renee E. Ahern
Affiliation:
Department of Physics and Astronomy, James Madison University, Harrisonburg, VA 22807
Costel Constantin
Affiliation:
Department of Physics and Astronomy, James Madison University, Harrisonburg, VA 22807
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Abstract

Non-stoichiometric and impurity doped titanium dioxide materials are good candidates for use in high temperature thermoelectric devices. Nanolayers of non-stoichiometric (TiO2-x) thin films were deposited on Al-foil by atomic layer deposition growth method. X-ray diffraction experiments showed anatase phase for these nanolayers. This crystal structure was maintained even after an annealing treatment of 600 °C for 60 minutes under an O2 pressure of ∼ 10 psi. This investigation presents for the first time how Al-foil can be functionalized by manipulating the Seebeck coefficient of these TiO2-x nanolayers.

Keywords

ceramicthermoelectricenergy generation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium F – Oxide Semiconductors and Thin Films , 2013 , pp. 271 - 275
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Grätzel, M. Comments Inorg. Chem. 12, 93–111 (1991).CrossRefGoogle Scholar
Grätzel, M. Nature 414, 338–344 (2001).CrossRefGoogle Scholar
Parsons, G. N., George, S. M., and Knez, M., MRS Bulletin vol. 36, 865 (2011).CrossRefGoogle Scholar
Vasquez, K. A., Vincent-Johnson, A. J., Hughes, W. C., Augustine, B. H., Lee, K., Parsons, G. N., Scarel, G., J. Vac. Sci. Technol. A. 30, 01A105-1 (2012).CrossRefGoogle Scholar
Thamaphat, K., Limsuwan, P., and Ngotawornchai, B., J. (Nat. Sci.) 42, 357 (2008).Google Scholar
Okinaka, N., Akiyama, T., ISIJ International 50, 1296 (2010).CrossRefGoogle Scholar
Bak, T., and Nowotny, J., J. Phys. Chem. 115, 9746 (2011).Google Scholar
Mikami, M., and Ozaki, K., J. of Phys: Conf. Series 379, 012006 (2012).Google Scholar