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S-Doped GaInAs Grown By Chemical Beam Epitaxy: Electrical And Structural Characterization

Published online by Cambridge University Press:  15 February 2011

E. C. Paloura ,
G. Petkos ,
P. J. Goodhew ,
B. Theys  and
J. Chevallier
E. C. Paloura
Affiliation:
Aristotle Univ. of Thessaloniki, Dept. of Physics, GR-54006 Thessaloniki, Greece.
G. Petkos
Affiliation:
Univ. of Liverpool, Dept. of Materials Science & Engineering, Liverpool, L69 3BX, U.K.
P. J. Goodhew
Affiliation:
Univ. of Liverpool, Dept. of Materials Science & Engineering, Liverpool, L69 3BX, U.K.
B. Theys
Affiliation:
C.N.R.S., Lab. de Physique des Solides de Bellevue, F.92.195 Meudon Cedex, France.
J. Chevallier
Affiliation:
C.N.R.S., Lab. de Physique des Solides de Bellevue, F.92.195 Meudon Cedex, France.
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Abstract

We report on the electrical and structural characterization of sulfur (S) doped Ga0.73In0.27As layers, grown on SI (001) GaAs substrates by chemical beam epitaxy. The room temperature free electron concentration is 2×1017cm−3 while the corresponding value of mobility is 3400 cm2V−1 s−1. The epilayer is characterized by a deep trap, which could be attributed to the electrical activity of dislocations, with an activation energy of 0.59 eV and a capture cross section 6×10−15 cm2. TEM analysis shows that the GaInAs/GaAs interface is characterized by dislocation lines and loop-like configurations which could be attributed to climb movement by point defect absorption or emission. Annealing at 420°C (Ar ambient for 5 min) does not alter the carrier concentration (n) and mobility (μ) significantly. The invariance of n and μ, even though the temperature should be high enough to dissociate any Satomic hydrogen complexes, indicates that the number of hydrogen-S donor complexes in the as-grown material is small compared with the donor concentration. Finally, the effect of intentional atomic hydrogen diffusion is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 523
Copyright
Copyright © Materials Research Society 1997

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