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Science and Technology of Piezoelectric/Diamond Hybrid Heterostructures for High Performance MEMS/NEMS Devices

Published online by Cambridge University Press:  01 February 2011

Orlando Auciello
Affiliation:
[email protected], Argonne National Laboratory, Materials Science and Center for Nanoscale Materials, 9700 South Cass Av, Argonne, IL, 60439, United States, 630-252-1685, 630-252-4798
Anirudha Sumant
Affiliation:
[email protected], Argonne National Laboratory, Center for Nanoscale Materials, 9700 South Cass Av., Argonne, IL, 60439, United States
Jon Hiller
Affiliation:
[email protected], Argonne National Laboratory, Center for Electron Microscopy, 9700 South Cass Av, Argonne, IL, 60439, United States
Bernd Kabius
Affiliation:
[email protected], Argonne National Laboratory, Center for Electron Microscopy, 9700 Sout Cass Av, Argonne, IL, 60439, United States
Sudarsan Srinivasa
Affiliation:
[email protected], INTEL, Ronler Acress 3, 2501 NW 229th Av, Hillsboro, OR, 97124, United States
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Abstract

Most current micro/nanoelectromechanical systems (MEMS/NEMS) are based on silicon. However, silicon exhibits relatively poor mechanical/tribological properties, compromising applications to some devices. Diamond films with superior mechanical/tribological properties provide an excellent alternative platform material. Ultrananocrystalline diamond (UNCD®) in film form with 2-5 nm grains exhibits excellent mechanical and tribological properties for high-performance MEMS/NEMS devices. Concurrently, piezoelectric Pb(ZrxTi1-x)O3 (PZT) films provide high sensitivity/low electrical noise for sensing/high-force actuation at relatively low voltages. Therefore, integration of PZT and UNCD films provides a high-performance platform for advanced MEMS/NEMS devices. This paper describes the bases of such integration and demonstration of low voltage piezoactuated hybrid PZT/UNCD cantilevers.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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