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Schottky Barriers on Magnetron Sputtered a-Si:H: Depletion width Effects on Photocarrier Collection vs Bandgap and Light Soaking

Published online by Cambridge University Press:  21 February 2011

James R. Doyle ,
N. Maley  and
John R. Abelson
James R. Doyle
Affiliation:
Coordinated Science Laboratory and Department of Materials Science, The University of Illinois, 1101 W. Springfield Ave., Urbana IL 61801.
N. Maley
Affiliation:
Coordinated Science Laboratory and Department of Materials Science, The University of Illinois, 1101 W. Springfield Ave., Urbana IL 61801.
John R. Abelson
Affiliation:
Coordinated Science Laboratory and Department of Materials Science, The University of Illinois, 1101 W. Springfield Ave., Urbana IL 61801.
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Abstract

We present a study of depletion width effects on the photocarrier collection efficiency in reactive magnetron sputtered a-Si:H films. Results are presented for as-deposited and light soaked 1.75 eV optical gap samples, and an as-deposited 1.60 eV gap film. The depletion width behavior with reverse bias is inferred from capacitance measurements. Comparison with photocurrent collection versus reverse bias voltage suggests that space charge effects can have an important role in the interpretation of collection efficiency on Schottky barriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 111
Copyright
Copyright © Materials Research Society 1991

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References

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