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Schottky Barrier Formation and Long Term Stability of Metal/N-Lnp Interfaces

Published online by Cambridge University Press:  25 February 2011

Z. Q. Shi  and
W. A. Anderson
Z. Q. Shi
Affiliation:
Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, State University of New York at Buffalo, 208 Bonner Hall, Buffalo, NY 14260
W. A. Anderson
Affiliation:
Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, State University of New York at Buffalo, 208 Bonner Hall, Buffalo, NY 14260
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Abstract

The formation of reliable high barrier height Schottky contacts to n-InP is essential for useful device fabrication. Fermi-level pinning traditionally has restricted the application of InP due to large reverse leakage current. Recently, we have proposed the enhancement of Schottky barrier heights (up to 0.98 eV) by deposition with the substrate cooled to low temperature (LT=77K) rather than at room temperature (RT=300K). Studies of the resistance of thin metal films during deposition reveals significant differences in metal nucleation for RT and LT diodes. For the long term stability study, a reverse bias of 2.0V was applied to both RT and LT diodes for more than 1500 hours. Then a constant forward current of 20 mA/cm2 was applied to the diode. The reverse current and forward voltage were recorded as a function of the testing time. After each step the saturation current density (Jo), barrier height (øB), and ideality factor (n) were measured using the current-voltage (I-V) technique. For a LT Au/n-InP diode, the Jo, øB, and n factor were found to be 3.4 × 10−11 A/cm2, 0.98 eV, and 1.31 before testing, and 4.8 × 10−10 A/cm2, 0.92 eV, and 1.31 after testing. The reverse leakage current was nearly constant during the testing. The forward voltage showed a little drop with time. The ultra-high øB and good stability of the LT diodes will be discussed in terms of the interface modification.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 715
Copyright
Copyright © Materials Research Society 1993

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References

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