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Scatterometry for Lithography Process Control and Characterization in IC Manufacturing

Published online by Cambridge University Press:  21 March 2011

Yiorgos Kostoulas  and
Christopher J. Raymond
Yiorgos Kostoulas
Affiliation:
Mike Littau Accent Optical Technologies 3817 Academy Pkwy South NE Albuquerque, NM 87109
Christopher J. Raymond
Affiliation:
Mike Littau Accent Optical Technologies 3817 Academy Pkwy South NE Albuquerque, NM 87109
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Abstract

As modern circuit architecture features steadily decrease in size, more accurate tools are needed to meaningfully measure critical dimensions (CD). As a general rule, a metrology tool should be able to measure 1/10 of the product tolerance. An emerging technology for high speed, high accuracy CD measurement is scatterometry. This paper describes scatterometrybased measurements of metal features of 350 nm with a space of 450 nm (pitch of 800nm) on top of a complicated layer stack and compares them with the results of an atomic force microscope (AFM). We also looked into lithography cell monitoring and trending by measuring CDs on 3 daily litho cell monitors over a period of 40 days. Our long term results show excellent agreement with those of a scanning electron microscope (CD-SEM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H5.2.1
Copyright
Copyright © Materials Research Society 2002

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References

1 Gaspar-Wilson, S. M., Naqvi, S., McNeil, J. R., Marchman, H., Johs, B., French, R., Kalk, F., Integrated Circuit Metrology, Inspection and Process Control IX, Proc. SPIE 2439, 1995.Google Scholar
2 Milner, L. M., Bishop, K. P., Naqvi, S. S. H., McNeil, J. R., J. Vac. Sc. Tech. B 11(4), pp. 1258–1266, 1993.Google Scholar
3 Hickman, K. C., et al., J. Vac. Sc. Tech. B 10(5), pp. 2259–2266, 1992.Google Scholar
4 Sturtevant, J. et al, Proc. SPIE 1926, pp. 106–114, 1993.Google Scholar
5 Hatab, Z. R., McNeil, J. R., Naqvi, S. S. H., J. Vac. Sc. Tech. B 13(2), pp. 174–182, 1995.Google Scholar
6 Coulombe, S., Logofatu, P., Minhas, B., Naqvi, S., McNeil, J. R., Integrated Circuit Metrology, Inspection and Process Control XII, Proc. SPIE 3332, 1999.Google Scholar
7 Raymond, C. J., Murnane, M. R., Naqvi, S. S. H., McNeil, J. R., J. Vac. Sc. Tech. B 13(4), pp. 1484–1495, 1995 Google Scholar
8 Raymond, C. J., et al., J. Vac. Sc. Tech. B 15(2), 1997.Google Scholar