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The Scattering Distribution from Semiconductors as a Function of Angle and Energy Loss in the Electron Microscope

Published online by Cambridge University Press:  10 February 2011

C. B. Boothroyd ,
R. E. Dunin-Borkowski  and
T. Walther
C. B. Boothroyd
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK
R. E. Dunin-Borkowski
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK
T. Walther
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK
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Abstract

We examine the scattering distribution from thin C, Ge and thick Si specimens as a function of scattering angle and energy loss, in order to gain insight into the relative contributions to both low and high angle annular dark field images from elastically and inelastically scattered elections.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 466: Symposium G – Atomic Resolution Microscopy of Surfaces and Interfaces , 1996 , 113
Copyright
Copyright © Materials Research Society 1997

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References

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