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Scanning Tunneling Microscopy Study of Cr-doped GaN Surface Grown by RF Plasma Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Muhammad B. Haider ,
Rong Yang ,
Hamad Al-Brithen ,
Costel Constantin ,
Arthur R. Smith ,
Gabriel Caruntu  and
Charles J O'Connor
Muhammad B. Haider
Affiliation:
[email protected], Ohio University, Physics and Astronomy, 251B Clippinger labs, Athens, OH, 45701, United States, 740-597-2964, 740-593-0433
Rong Yang
Affiliation:
[email protected]
Hamad Al-Brithen
Affiliation:
[email protected]
Costel Constantin
Affiliation:
[email protected]
Arthur R. Smith
Affiliation:
[email protected], Ohio University, Physics and Astronomy, United States
Gabriel Caruntu
Affiliation:
[email protected]
Charles J O'Connor
Affiliation:
[email protected]
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Abstract

Cr doped GaN was grown by rf N-plasma molecular beam epitaxy on sapphire(0001) at a sample temperature of 700 °C. Cr/Ga flux ratio was set to a value from 5% to 20%. Subsequently, scanning tunneling microscopy was performed on these surfaces. Cr incorporates on the GaN surface at 700 °C at a Cr concentration of 5% and less. By increasing the Cr/Ga flux ratio to 20% in CrGaN, linear nano structures were formed on the surface, which were not observed on the bare GaN surface. The RHEED and STM studies reveal that Cr atoms form 3×3 reconstruction when 0.1 ML of Cr was deposited at room temperature on 1×1 adlayer of Ga on GaN(000-1). Cr substitutes Ga on the surface when deposited at 700 °C on the MBE grown GaN(000-1) surface for all the experiments which we have performed provided the Cr concentration is low (∼5%).

Keywords

scanning probe microscopy (SPM)molecular beam epitaxy (MBE)magnetic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF04-03
Copyright
Copyright © Materials Research Society 2006

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References

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