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Scanning Tunneling Microscopy Observation of the Reaction of AlCl3 on Si(111)-7×7 Surface

Published online by Cambridge University Press:  22 February 2011

Katsuhiro Uesugi ,
Takaharu Takiguchi ,
Michiyoshi Izawa ,
Masamichi Yoshimura  and
Takafumi Yao
Katsuhiro Uesugi
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Takaharu Takiguchi
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Michiyoshi Izawa
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Masamichi Yoshimura
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Takafumi Yao
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
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Abstract

The initial stage of the reaction of aluminum trichloride (AlCl3) with the Si(111)-(7×7) surface and the annealing effects of the adsorbed surface are investigated with a scanning tunneling microscope (STM). Reacted and unreacted sites manifest in the contrast of adatom sites on the AlCl3-exposed surface. An AlCl3 molecule dissociatively adsorbs onto the Si( 111)-(7×7) surface at room temperature, which yields C1 atoms. Preferential adsorption site is found to be the center adatom site rather than the corner adatom site, and Cl atom adsorbs onto the top site of the center Si adatom. The migration of adsorbed molecules (AlClx) in the (7×7) unit cell is observed at room temperature. The SiCl,, species desorb from the surface by thermal annealing at 600 'C, leaving vacancies behind. After annealing at 1200 0C, Al deposition occurs in a limited area and the surface shows the V/7×V7 reconstruction, which is a characteristic Al-induced surface structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 419
Copyright
Copyright © Materials Research Society 1994

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References

1 Schnell, R.D., Rieger, D., Bogen, A., Himpsel, F.J., Wandeltand, K. and Steinmann, W., Phys. Rev. B 32(1985) 8057.CrossRefGoogle Scholar
2 Sesselmann, W. and Chuang, T.J., J. Vac. Sci. Technol. B 3 (1985) 1507.CrossRefGoogle Scholar
3 Gupta, P., Coon, P.A., Koehler, B.G. and George, S.M., Surf. Sci. 249 (1991) 92.CrossRefGoogle Scholar
4 Matsuo, J., Yannick, F. and Karahashi, K., Surf. Sci. 283 (1993)CrossRefGoogle Scholar
5 Villarrubia, J.S. and Boland, J.J., Phys. Rev. Lett. 63 (1989) 306.CrossRefGoogle Scholar
6 Boland, J.J. and Villarrubia, J.S., Phys. Rev. B 41 (1990) 9865.CrossRefGoogle Scholar
7 Wolkow, R. and Avouris, Ph., Phys. Rev. Lett. 60 (1988) 1049.CrossRefGoogle Scholar
8 Avouris, Ph. and Wolkow, R., Phys. Rev. B 39 (1989) 5091.CrossRefGoogle Scholar
9 Hamers, R.J., Phys. Rev. B 40 (1989) 1657.CrossRefGoogle Scholar