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Scanning Probe Microscopy (SPM) for the Investigation of Local Electrical Properties of High-K Dielectric/Ferroelectric Films

Published online by Cambridge University Press:  10 February 2011

S.A. Landau ,
P.-A. Weiß ,
N. Junghans ,
B.O. Kolbesen ,
D. Adderton ,
G. Schindler ,
W. Hartner ,
F. Hintermaier ,
C. Dehm  and
C. Mazuré
S.A. Landau
Affiliation:
Institute of Inorganic Chemistry/Analytical Chemistry, Johann Wolfgang Goethe-University, Marie-Curie-Str. 11, 60439 Frankfurt/M., [email protected]
P.-A. Weiß
Affiliation:
Institute of Inorganic Chemistry/Analytical Chemistry, Johann Wolfgang Goethe-University, Marie-Curie-Str. 11, 60439 Frankfurt/M., GERMANY
N. Junghans
Affiliation:
Institute of Inorganic Chemistry/Analytical Chemistry, Johann Wolfgang Goethe-University, Marie-Curie-Str. 11, 60439 Frankfurt/M., GERMANY
B.O. Kolbesen
Affiliation:
Institute of Inorganic Chemistry/Analytical Chemistry, Johann Wolfgang Goethe-University, Marie-Curie-Str. 11, 60439 Frankfurt/M., GERMANY
D. Adderton
Affiliation:
Digital Instruments, 112 Robin Hill Road, Santa Barbara, CA 93117USA
G. Schindler
Affiliation:
Semiconductor Group, Siemens AG, Otto-Hahn-Ring 6, 81739 Munich, GERMANY
W. Hartner
Affiliation:
Semiconductor Group, Siemens AG, Otto-Hahn-Ring 6, 81739 Munich, GERMANY
F. Hintermaier
Affiliation:
Semiconductor Group, Siemens AG, Otto-Hahn-Ring 6, 81739 Munich, GERMANY
C. Dehm
Affiliation:
Semiconductor Group, Siemens AG, Otto-Hahn-Ring 6, 81739 Munich, GERMANY
C. Mazuré
Affiliation:
Semiconductor Group, Siemens AG, Otto-Hahn-Ring 6, 81739 Munich, GERMANY
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Abstract

Thin films of high-k dielectric/ferroelectric materials such as BaxSr1−xTiO3 (BST), PbZrxTi1−xO3 (PZT) and SrBi2Ta2O9 (SBT) are currently investigated for integration into high-density CMOS technology. Characterization of these materials by SPM techniques combines imaging of the morphology and microstructure of these films and recording of various electrical parameters at the same local area. Using commercial equipment we have investigated electrical properties such as polarization and leakage current behavior of MOD/MOCVD SBT by applying electrostatic force microscopy (EFM) and conducting atomic force microscopy (CAFM). After applying bias voltages of a few volts across the SBT films between the scanning tip and the lower electrode completely polarized/reverse polarized SBT layers could be observed by EFM. Even single crystallite polarization was imaged. However, unexpectedly some films showed incomplete polarization, which may be caused by local electrical field effects. Images taken by C-AFM displayed enhancement of leakage currents in grain boundary regions, in particular at depressions between adjacent crystallites. The results achieved demonstrate that SPM techniques operated in a variety of imaging and measuring modes, provide a tremendous potential in the elucidation of the microscopic properties of high-k materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 567
Copyright
Copyright © Materials Research Society 1999

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References

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