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Saturation behavior of the Light-Induced Defect Density in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

H. R. Park ,
J. Z. Liu ,
P. Roca i Cabarrocas ,
A. Maruyama ,
M. Isomura ,
S. Wagner ,
J. R. Abelson  and
F. Finger
H. R. Park
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
J. Z. Liu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
P. Roca i Cabarrocas
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
A. Maruyama
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
M. Isomura
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
J. R. Abelson
Affiliation:
Materials Science and Engineering Department and Coordinated Science Laboratory, University of Illinois at Urbana-Champain, Urbana, Illinois 61801
F. Finger
Affiliation:
Institute of Microtechnology, University of Neuchâtel, A.L. Bréguet 2, CH-2000 Neuchâtel, Switzerland
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Abstract

Using a Kr ion laser (λ = 647.1 nm) to produce a carrier generation rate G of 3 × 1020 cm−3s−1, we have saturated the light-induced defect generation in hydrogenated (and fluorinated) amorphous silicon (a-Si:H(F)), within a few hours near room temperature. While the defect generation rate scales roughly with 1/G2, the saturation defect densities Ns,sat are essentially independent of G. The saturation is not due to thermal annealing. We have further measured Ns,sat m 37 a-Si:H(F) films grown in six different reactors under different conditions. The results show that Ns,sat lies between 5 × 1016 and 2 × 1017 cm−3, that Ns,sat drops with decreasing optical gap and hydrogen content, and that Ns,sat is not correlated with the initial defect density or with the Urbach energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 751
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

Park, H.R., Liu, J.Z., and Wagner, S., Appl. Phys. Lett., 55, 2638 (1989).Google Scholar
Smith, Z E., Chu, V., Shepard, K., Aljishi, S., Slobodin, D., Kolodzey, J., Wagner, S., and Chu, T.L., Appl. Phys. Lett. 50, 1521 (1987).Google Scholar
Stutzmann, M., Jackson, W., and Tsai, C., Phys. Rev. B32. 23 (1985).Google Scholar
Park, H.R., Liu, J.Z., Maruyama, A., and Wagner, S., in Amorphous Silicon Technology - 1989, edited by Madan, A., Thompson, M.J., Taylor, P.C., Hamakawa, Y., and LeComber, P.G. (Mater. Res. Soc. Proc. 149, Pittsburgh, PA 1989) p. 613.Google Scholar
Redfield, D. and Bube, R.H., Appl. Phys. Lett., 54, 1037 (1989).Google Scholar
Ohsawa, M., Hama, T., Akasaka, T., Sakai, H., Ishida, S., and Uchida, Y., J. Non. Cryst. Solids, 97 &98. 91 (1987).Google Scholar
7. Curtins, H., Favre, M., Ziegler, Y., Wyrsch, N., and Shah, A.V., in Amorphous Silicon Technology, edited by Hamakawa, Y., LeComber, P.G., Madan, A., Taylor, P.C., and Thompson, M.J. (Mater. Res. Soc. Proc. 118, Pittsburgh, PA 1988) p. 159.Google Scholar
8. Ohagi, H., Nakata, J., Miyanishi, A., Imao, S., Jeong, M., Shirafuji, J., Fujibayashi, K., and Inuishi, Y., Jap. J. Appl. Phys. 22, L2245 (1988).Google Scholar
9. Smith, Z.E. and Wagner, S., Phys. Rev. Lett., 688 (1987).Google Scholar
10. Dersch, R., Stuke, J., and Beichler, J., Appl. Phys. Lett., 38, 456 (1981).Google Scholar
11. Skumanich, A. and Amer, N.M., Appl. Phys. Lett., 52, 643 (1989).Google Scholar
12. Ranganathan, R., Gal, M., Viner, J.M., and Taylor, P.C., Phys. Rev. B, 35, 9222 (1987).Google Scholar
13. In the 24 samples whose densities of SiH2 groups we know, we found no correlation between this density and Ns,sat.Google Scholar
14. Pinarbasi, M., Kushner, M.J., and Abelson, J.R., J. Appl. Phys., 1990, to be published.Google Scholar