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Saturation and Flow Rate Effects on the Response of a Pd/AIN/SiC Hydrogen Sensor

Published online by Cambridge University Press:  15 March 2011

M.H. Rahman ,
K.Y.S. Ng ,
E.F. McCullen ,
R. Naik ,
G. Newaz ,
Y. Danylyuk ,
L. Rimai ,
R.J. Baird  and
G.W. Auner
M.H. Rahman
Affiliation:
Department of Chemical Engineering and Materials Science, Wayne State University, Detroit, MI-48202
K.Y.S. Ng
Affiliation:
Department of Chemical Engineering and Materials Science, Wayne State University, Detroit, MI-48202
E.F. McCullen
Affiliation:
Department of Physics and Astronomy, Wayne State University, Detroit, MI-48202
R. Naik
Affiliation:
Department of Physics and Astronomy, Wayne State University, Detroit, MI-48202
G. Newaz
Affiliation:
Department of Mechanical Engineering, Wayne State University, Detroit, MI-48202
Y. Danylyuk
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI-48202
L. Rimai
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI-48202
R.J. Baird
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI-48202
G.W. Auner
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI-48202
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Abstract

A Pd/AlN/SiC device was fabricated with a 550 Å thick AlN layer in between the SiC substrate and Pd gate. At fixed flow rate, the response to Hydrogen initially increases roughly linearly with concentration, but eventually becomes saturated. The magnitude of the response as well as the saturating concentration increase with temperature. At 120° C the response saturates around 60 ppm of H2 whereas at 250° C, the onset of saturation occurs at higher ppm. The magnitude of the response also increases with the total flow rate, up to a flow rate of 250 sccm beyond which it remains constant. In the linear region, the magnitude of the response increases by a factor of 4 between 120° and 250° C, at a flow rate of 250 sccm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J5.7
Copyright
Copyright © Materials Research Society 2004

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