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Saddle-Field Glow-Discharge Deposition of Amorphous Semiconductors

Published online by Cambridge University Press:  10 February 2011

F. Gaspari ,
L. S. Sidhu ,
S. K. O'leary  and
S. Zukotynski
F. Gaspari
Affiliation:
Department of Electrical and Computer Engineering University of Toronto, Toronto, Ontario, Canada M5S 3G4
L. S. Sidhu
Affiliation:
Department of Electrical and Computer Engineering University of Toronto, Toronto, Ontario, Canada M5S 3G4
S. K. O'leary
Affiliation:
Department of Electrical and Computer Engineering University of Toronto, Toronto, Ontario, Canada M5S 3G4
S. Zukotynski
Affiliation:
Department of Electrical and Computer Engineering University of Toronto, Toronto, Ontario, Canada M5S 3G4
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Abstract

We present a dc saddle-field glow-discharge deposition procedure which combines the positive attributes of the conventional dc and rf glow-discharge techniques. Preliminary mass spectra analyses of both silane and methane glow-discharges demonstrates that ions constitute a significant fraction of the species reaching the film surface. Growth rate analyses suggest that ions play a significant role in the saddle-field glow-discharge deposition of amorphous semiconducting films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 375
Copyright
Copyright © Materials Research Society 1996

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References

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