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Saddle-Field Glow-Discharge Deposition of Amorphous Semiconductors

Published online by Cambridge University Press:  10 February 2011

F. Gaspari ,
L. S. Sidhu ,
S. K. O'leary  and
S. Zukotynski
F. Gaspari
Affiliation:
Department of Electrical and Computer Engineering University of Toronto, Toronto, Ontario, Canada M5S 3G4
L. S. Sidhu
Affiliation:
Department of Electrical and Computer Engineering University of Toronto, Toronto, Ontario, Canada M5S 3G4
S. K. O'leary
Affiliation:
Department of Electrical and Computer Engineering University of Toronto, Toronto, Ontario, Canada M5S 3G4
S. Zukotynski
Affiliation:
Department of Electrical and Computer Engineering University of Toronto, Toronto, Ontario, Canada M5S 3G4
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Abstract

We present a dc saddle-field glow-discharge deposition procedure which combines the positive attributes of the conventional dc and rf glow-discharge techniques. Preliminary mass spectra analyses of both silane and methane glow-discharges demonstrates that ions constitute a significant fraction of the species reaching the film surface. Growth rate analyses suggest that ions play a significant role in the saddle-field glow-discharge deposition of amorphous semiconducting films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 375
Copyright
Copyright © Materials Research Society 1996

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References

[1] Matsuda, A. and Hata, N., in Glow-Discharge Hydrogenated Amorphous Silicon, edited by Tanaka, K. ( KTK Scientific, Tokyo, 1989 ), p. 9.Google Scholar
[2] Spear, W.E. and LeComber, P. G., in The Physics of Hydrogenated Amorphous Silicon, edited by Joannopoulos, J. D. and Lucovsky, G. (Springer-Verlag, New York, (1984), p. 63.Google Scholar
[3] Kruzelecky, R.V. and Zukotynski, S., Mat. Sci. For. 140–142, 89 (1993).Google Scholar
[4] Harry, M. and Zukotynski, S., J. Vac. Sci. A 9 496 (1991).Google Scholar
[5] Lira, P.K., Gaspari, F., and Zukotynski, S., J. Appl. Phys. 78, 5307 (1995).Google Scholar
[6] Gaspari, F., OTgary, S. K., and Zukotynski, S., J. Non-Cryst. Solids 155, 149 (1993).Google Scholar
[7] Sidhu, L.S., Gaspari, F., OTgary, S. K., and Zukotynski, S., Mat. Res. Soc. Syrup. Proc. 377, 87 (1995).Google Scholar
[8] Franks, J., Vacuum 34, 259 (1984).Google Scholar
[9] Matsuda, A. and Tanaka, K., J. Appl. Phys. 60, 2351 ( 1986 ).Google Scholar
[10] Turban, G., Catherine, Y., and Grolleau, B., Thin Solid Films 77, 287 (1981).Google Scholar