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Rugged Thin Film Diode Liquid Crystal Switches Based on Amorphous Sinx:H

Published online by Cambridge University Press:  15 February 2011

B Mc Garvey ,
J B Clegg ,
S C Deane ,
J N Sandoe  and
J M Shannon
B Mc Garvey
Affiliation:
Philips Research Laboratories, Redhill, Surrey RHl 5HA, UK.
J B Clegg
Affiliation:
Philips Research Laboratories, Redhill, Surrey RHl 5HA, UK.
S C Deane
Affiliation:
Philips Research Laboratories, Redhill, Surrey RHl 5HA, UK.
J N Sandoe
Affiliation:
Philips Research Laboratories, Redhill, Surrey RHl 5HA, UK.
J M Shannon
Affiliation:
Philips Research Laboratories, Redhill, Surrey RHl 5HA, UK.
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Abstract

Amorphous SiNx:H thin film diodes (TFDs) can be used for pixel addressing in active matrix liquid crystal displays. They depend on the application of high electric fields to switch from the ‘off to the ‘on’ states. They prove to be remarkably rugged and can be made with high yield and tolerance. An important feature that contributes to this ruggedness is the ability of these switches to generate defect states at a rate dependent on current density. Current induced defect states trap electrons and cause a reduction in field at the cathode contact, which in turn causes a reduction in current density. Therefore, current will be transferred from regions of high current to regions of low current in the device, making the current flow more uniform. TFDs with thin regions will become effectively thicker during current stressing. In order to check this hypothesis, thin film diodes with nonuniform thickness a-SiNx:H layers were current stressed, and the I-V characteristics compared with those calculated using a defect generation model. The experimental data agreed well with our theoretical model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 955
Copyright
Copyright © Materials Research Society 1997

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References

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