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Room-Temperature Diffusion of Mn in CdTe and the Formation of Cd1-xMnxTe

Published online by Cambridge University Press:  25 February 2011

A. Wall ,
A. Raisanen ,
G. Haugstad  and
A. Franciosi
A. Wall
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
A. Raisanen
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
G. Haugstad
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
A. Franciosi
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
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Abstract

Deposition of Mn at room temperature onto atomically clean CdTe(110) surfaces yields atomic interdiffusion for metal coverages <3 angstroms with Mn atoms occupying cation sites within the surface and near-surface layers of the semiconductor. Synchrotron radiation photoemission studies with variable photoelectron escape depth indicate the formation of a relatively homogeneous semiconductor surface alloy. The highest Mn concentration observed in the alloy exceeds those obtainable with bulk crystal growth methods.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 665
Copyright
Copyright © Materials Research Society 1990

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References

1 Furdyna, J.K., J. Vac. Sci. Technol. A4, 2002 (1986).Google Scholar
2 Brandt, N.B. and Moshchalkov, V.V., Adv. Phys. 33, 193 (1984).Google Scholar
3 Franciosi, A., in Diluted Magnetic (Semimagnetic) Semiconductors, edited by Aggarwal, R.L., Furdyna, J.K., and von Molnar, S., Materials Research Society, Pittsburgh, 1987), p. 175, and references therein.Google Scholar
4 Franciosi, A., Wall, A., Gao, Y., Weaver, J.H., Tsai, M.-H., Dow, J.D., Kasowski, R.V., Reifenberger, R., and Pool, F., Phys. Rev. B Rapid Commun. 40, December 15 (1989), and A. Wall, A. Franciosi, Y. Gao, J.H. Weaver, M.-H. Tsai, J.D. Dow, and R.V. Kasowski, J. Vac. Sci. Technol. A7, 656 (1989).Google Scholar
5 von Ortenberg, M., Phys. Rev. Lett. 49, 1041 (1982).Google Scholar
6 A more extensive analysis will be presented in a longer forthcoming paper: A. Wall, A. Raisanen, G. Haugstad, and A. Franciosi (unpublished).Google Scholar
7 This characteristic behavior has been encountered for a number of metal-cation exchange reactions. See for example Raisanen, A., Wall, A., Chang, S., Philip, P., Troullier, N., Franciosi, A., and Peterman, D.J., J. Vac. Sci. Technol. A6, 2741 (1988), and references therein.Google Scholar
8 Margaritondo, G. and Franciosi, A., Ann. Rev. Mater. Sci. 14, 67 (1984).Google Scholar