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Room-Temperature Diffusion of Mn in CdTe and the Formation of Cd1-xMnxTe

Published online by Cambridge University Press:  25 February 2011

A. Wall ,
A. Raisanen ,
G. Haugstad  and
A. Franciosi
A. Wall
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
A. Raisanen
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
G. Haugstad
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
A. Franciosi
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
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Abstract

Deposition of Mn at room temperature onto atomically clean CdTe(110) surfaces yields atomic interdiffusion for metal coverages <3 angstroms with Mn atoms occupying cation sites within the surface and near-surface layers of the semiconductor. Synchrotron radiation photoemission studies with variable photoelectron escape depth indicate the formation of a relatively homogeneous semiconductor surface alloy. The highest Mn concentration observed in the alloy exceeds those obtainable with bulk crystal growth methods.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 665
Copyright
Copyright © Materials Research Society 1990

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References

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