Article contents
Room Temperature Uv Laser Continuous Direct Writing of Al From Tma
Published online by Cambridge University Press: 26 February 2011
Abstract
Aluminum lines have been drawn at a writing speed of 3.8 μm/s on (100) p-type Si by UV laser-assisted chemical processing, from a flow of TMA diluted in H2. These results are the experimental proof of direct writing at room temperature due to a single-step deposition process induced by a single light source. The useful (30 μQ-cm) ohmic-type resistivity obtained depends strongly on the photolytic process parameters.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1998
References
REFERENCES
- 4
- Cited by