Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-29T07:28:22.773Z Has data issue: false hasContentIssue false
  • English
  • Français

Room Temperature Uv Laser Continuous Direct Writing of Al From Tma

Published online by Cambridge University Press:  26 February 2011

J.E. Bouree  and
J. Flicstein
J.E. Bouree
Affiliation:
CNRS, Laboratoire de Physique des Solides, 92195 MEUDON, FRANCE
J. Flicstein
Affiliation:
CNET, Laboratoire de Bagneux, 92220 BAGNEUX, FRANCE
Get access

Abstract

Aluminum lines have been drawn at a writing speed of 3.8 μm/s on (100) p-type Si by UV laser-assisted chemical processing, from a flow of TMA diluted in H2. These results are the experimental proof of direct writing at room temperature due to a single-step deposition process induced by a single light source. The useful (30 μQ-cm) ohmic-type resistivity obtained depends strongly on the photolytic process parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 55
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Ehrlich, D.J. and Tsao, J.Y., J. Vac. Sci. Technol. Bl, 969 (1983).Google Scholar
2 Baäuerle, O., in Laser Processing and Diagnostics, Springer Series in Chemical Phys. 39, 166 (Springer, Berlin 1984).Google Scholar
3 Osgood, R.M. and Gilgen, H.H., Ann. Rev. Mater. Sci., 15, 549 (1985).Google Scholar
4 Tsao, J.Y., Ehrlich, D.J., Silversmith, D.J. and Mountain, R.W., IEEE Electron Dev. Lett. EDL-3, 164 (1982).Google Scholar
5 Randall, J.N., Ehrlich, D.J. and Tsao, J.Y., J. Vac. Sci. Technol. B3, 262 (1985).Google Scholar
6 Tsao, J.Y. and Ehrlich, D.J., Appl. Phys. Lett. 45, 617 (1984).Google Scholar
7 Bouree, J.E., Flicstein, J., Nissim, Y.I., in photon Beam and Plasma Stimulated Chemical Processes at Surfaces, MRS Symp. Proc. 75, 129 (1989)Google Scholar
8 Higashi, G.S. and Fleming, C.G., Appl. Phys. Lett. 48, 1051 (1986). G.S. Higashi, G.E. Blonder and C.G. Fleming in Photon Beam and plasma Stimulated Chemical Processes at Surfaces, MRS Symp. Proc. 75, 117 (1987).Google Scholar
9 Flicstein, J., Bouree, J.E., Bresse, J.F. and Pougnet, A.M., this volumeGoogle Scholar
10 Gold, R.B. and Gibbons, J.F., J. Appl. Phys. 51, 1256 (1980).Google Scholar
11 Bouree, J.E. and Flicstein, J., to be published in NATO ASI Series (1988).Google Scholar
12 Cacouris, T., Scelzi, G., Beach, R., Osgood, R.M. and Krchnavek, R., CLEO, THU-14, Baltimore, USA (1987).Google Scholar