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Room Temperature Current Suppression on Magnetic Tunnel Junction Based Molecular Spintronics Devices

Published online by Cambridge University Press:  09 August 2013

Pawan Tyagi
Pawan Tyagi*
Affiliation:
Department of Chemical and Materials Engineering, University of Kentucky, Lexington, Kentucky-40506, USA
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Abstract

Molecular conduction channels between two ferromagnetic electrodes can produce strong exchange coupling and dramatic effect on the spin transport, thus enabling the realization of novel logic and memory devices. To realize such device, we produced Multilayer Edge Molecular Spintronics Devices (MEMSDs) by bridging the organometallic molecular clusters (OMCs) across a ∼2 nm thick insulator of a magnetic tunnel junction (MTJ), along its exposed side edges. These MEMSDs exhibited unprecedented increase in exchange coupling between ferromagnetic films and dramatic changes in the spin transport. This paper focuses on the dramatic current suppression phenomenon exhibited by MEMSDs at room temperature. In the event of current suppression, the effective MEMESDs’ current reduced by as much as six orders in magnitude as compared to the leakage current level of a MTJ test bed. Current suppression phenomenon was found to be associated with the equally dramatic changes in the MTJ test beds due to OMCs. Role of OMC in changing MTJ test bed properties was determined by the three different types of magnetic characterizations: SQUID Magnetometer, Ferromagnetic Resonance, and Magnetic Force Microscopy. Observation of current suppression by independent research groups and supporting studies on similar systems will be crucially important to unequivocally establish the utility of MEMSD approach.

Keywords

absorptiondielectricelectronic material
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1507: Symposium AA – Oxide Nanoelectronics and Multifunctional Dielectrics , 2013 , mrsf12-1507-aa12-34
Copyright
Copyright © Materials Research Society 2013 

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