Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-09T09:35:36.914Z Has data issue: false hasContentIssue false
  • English
  • Français

Room Temperature Band-Edge Luminescence from Silicon Grains Prepared by the Recrystallization of Mesoporous Silicon

Published online by Cambridge University Press:  15 February 2011

Karen L. Moore ,
Leonid Tsybeskov ,
Philippe M. Fauchet  and
Dennis G. Hall
Karen L. Moore
Affiliation:
University of Rochester, The Institute of Optics, Rochester, NY 14627
Leonid Tsybeskov
Affiliation:
University of Rochester, Department of Electrical Engineering, Rochester, NY 14627
Philippe M. Fauchet
Affiliation:
University of Rochester, The Institute of Optics, Rochester, NY 14627 University of Rochester, Department of Electrical Engineering, Rochester, NY 14627
Dennis G. Hall
Affiliation:
University of Rochester, The Institute of Optics, Rochester, NY 14627
Get access

Abstract

Room-temperature photoluminescence (PL) peaking at 1.1 eV has been found in electrochemically etched mesoporous silicon annealed at 950°C. Low-temperature PL spectra clearly show a fine structure related to phonon-assisted transitions in pure crystalline silicon (c-Si) and the absence of defect-related (e.g.P-line) and impurity-related (e.g.oxygen, boron) transitions. The maximum PL external quantum efficiency (EQE) is found to be better than 0.1% with a weak temperature dependence in the region from 12K to 400K. The PL intensity is a linear function of excitation intensity up to 100 W/cm2. The PL can be suppressed by an external electric field ≥ 105 V/cm. Room temperature electroluminescence (EL) related to the c-Si band-edge is also demonstrated under an applied bias ≤ 1.2 V and with a current density ≈ 20 mA/cm2. A model is proposed in which the radiative recombination originates from recrystallized Si grains within a non-stoichiometric Si-rich silicon oxide (SRSO) matrix.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 517
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Haynes, J.R. and Briggs, H.B., Phys. Rev. 86, 647 (1952).Google Scholar
2.Haynes, J.R. and Westphal, W.C., Phys. Rev. 101, 1676 (1956).Google Scholar
3.Brus, L.E., Szajowski, P.F., Wilson, W.L., Harris, T.D., Schuppler, S., and Citrin, P.H., J. Am. Chem. Soc. 117, 2915 (1995).Google Scholar
4.Noel, J.P., Rowell, N.L., Houghton, D.C., and Perovic, D.D., Appl. Phys. Lett. 57, 1037 (1990).Google Scholar
5.Davies, G., Phys. Rep. 176, 84 (1989).Google Scholar
6.Yablonovitch, E. and Gmitter, T., Appl. Phys. Lett. 49, 587 (1986).Google Scholar
7.King, O. and Hall, D.G., Phys. Rev. B 50, 10661 (1994).Google Scholar
8.Tsybeskov, L., Moore, K.L., Duttagupta, S.P., Hirschman, K.D., Hall, D.G., and Fauchet, P.M., Appl. Phys. Lett. 69, 3411 (1996).Google Scholar
9.Pankov, J.I., Optical Processes in Semiconductors, Dover, New York, 1971, p. 422.Google Scholar
10.Sze, S.M., Physics of Semiconductor Devices, Wiley, New York, 1981, p.868.Google Scholar
11.Brown, T.G., Bradfield, P.L., Hall, D.G., and Soref, R.A., Appl. Phys. Lett. 12, 753 (1987).Google Scholar
12.Weman, H., Zhao, Q.X., and Monemar, B., Phys. Rev. B 36, 5054 (1987).Google Scholar
13.Mott, N.F. and Devis, E.A., Electronic Processes in Non-Crystalline Materials, Oxford University Press, Oxford, 1979.Google Scholar