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The Roles of Stress, Geometry and Orientation on Misfit Dislocations Kinetics and Energetics in Epitaxial Strained Layers.

Published online by Cambridge University Press:  22 February 2011

R. Hull ,
J. C. Bean ,
F. Ross ,
D. Bahnck  and
L. J. Pencolas
R. Hull
Affiliation:
AT&T Bell Laboratories 600 Mountain Avenue Murray Hill, NJ 07974
J. C. Bean
Affiliation:
AT&T Bell Laboratories 600 Mountain Avenue Murray Hill, NJ 07974
F. Ross
Affiliation:
AT&T Bell Laboratories 600 Mountain Avenue Murray Hill, NJ 07974
D. Bahnck
Affiliation:
AT&T Bell Laboratories 600 Mountain Avenue Murray Hill, NJ 07974
L. J. Pencolas
Affiliation:
AT&T Bell Laboratories 600 Mountain Avenue Murray Hill, NJ 07974
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Abstract

The geometries, microstructures, energetics and kinetics of misfit dislocations as functions of surface orientation and the magnitude of strain/stress are investigated experimentally and theoretically. Examples are drawn from (100), (110) and (111) surfaces and from the GexSi1–x/Si and InxGa1–x/GaAs systems. It is shown that the misfit dislocation geometries and microstructures at lattice mismatch stresses < - 1GPa may in general be predicted by operation of the minimum magnitude Burgers vector slipping on the widest spaced planes. At stresses of the order several GPa, however, new dislocation systems may become operative with either modified Burgers vectors or slip systems. Dissociation of totál misfit dislocations into partial dislocations is found to play a crucial role in strain relaxation, on surfaces other than (100) under compressive stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 379
Copyright
Copyright © Materials Research Society 1992

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References

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