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Role of the First Atomic Layers in Epitaxial Relationship and Interface Characteristics of SrTiO3 Films on CeO2/YSZ/Si(001)

Published online by Cambridge University Press:  11 February 2011

Tomoaki Yamada ,
Takanori Kiguchi ,
Naoki Wakiya ,
Kazuo Shinozaki  and
Nobuyasu Mizutani
Tomoaki Yamada
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8552, JAPAN
Takanori Kiguchi
Affiliation:
Center for Advanced Materials Analysis, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8552, JAPAN
Naoki Wakiya
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8552, JAPAN
Kazuo Shinozaki
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8552, JAPAN
Nobuyasu Mizutani
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8552, JAPAN
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Abstract

The role of the first atomic layers in epitaxial relationship and interface characteristics of SrTiO3 films on CeO2/yttria-stabilized zirconia (YSZ)/Si(001) substrates was investigated. Although SrTiO3 film deposited on CeO2/YSZ/Si directly was preferentially (110)-oriented, epitaxial SrTiO3(001) films could be grown on CeO2/YSZ/Si by controlling first atomic layer of the films. In the case of SrTiO3 film starting from TiO2 layer, the neither ion drift nor charge injection occurred in the SrTiO3/CeO2 interface. On the other hand, for the film starting from SrO layer, an injection-type hysteresis was observed. This is probably due to the electron traps in the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 747: Symposia T/V – Crystalline Oxides on Semiconductors – Interfacial Issues for Oxide-Based Electronics , 2002 , T1.7
Copyright
Copyright © Materials Research Society 2003

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References

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