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The Role of Substrate Surface Reactions in Heteroepitaxy of PbSe on BaF2

Published online by Cambridge University Press:  25 February 2011

Patrick J. McCann*
Affiliation:
School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, OK 73019-0631
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Abstract

A strong relationship between growth initiation temperature and resulting growth morphology has been observed in liquid phase epitaxy (LPE) of PbSe on BaF2. High quality epitaxial layers are consistently produced when growth is initiated between 600 and 660 degrees centigrade. This condition for epitaxy correlates with formation of a binary barium-selenide layer on the substrate surface resulting from a reaction between selenium and BaF2. This reaction, corraborated by visual observation and Auger electron spectroscopic (AES) analysis of the reaction product, occurs prior to PbSe layer growth when the substrate is exposed to selenium vapor as it is positioned under the growth solution. A barium-selenide reaction layer on a BaF2 substrate can catalyze nucleation by reducing deposit/substrate interface energy and or by increasing substrate surface energy. Such epitaxy-enabling substrate surface reactions can also occur during vapor deposition of IV-VI semiconductors on BaF2 substrates and may explain the widely observed epitaxial temperature phenomenon.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Das, S. R., Cook, J. G., Phipps, M., and Boland, W. E, Thin Solid Films 181, 227 (1989).Google Scholar
2. Clemens, H., Fantner, E. J., Ruhs, W., and Bauer, G., J. Crystal Growth 66, 251 (1984).Google Scholar
3. Honke, D. K. and Kaiser, S. W., J. Appl. Phys. 45, 892 (1974).Google Scholar
4. Manasevit, H. M., Ruth, R. P., and Simpson, W. I., J. Crystal Growth 77, 468 (1986).Google Scholar
5. Manasevit, H. M. and Simpson, W. I., J. Electrochem Soc. 12, 444 (1975).Google Scholar
6. Gilman, J. J., J. Appl. Phys. 31, 2208 (1960).Google Scholar