Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-23T13:50:17.104Z Has data issue: false hasContentIssue false
  • English
  • Français

Role of Si(100) Surface Patterns in the Phase Separation of Cu/Sn Thin Films

Published online by Cambridge University Press:  21 March 2011

Qin Hu ,
Martin Zinke–Allmang  and
Ian V. Mitchell
Qin Hu
Affiliation:
Department of Physics and Astronomy, The University of Western Ontario London, Ontario, CanadaN6A 3K7
Martin Zinke–Allmang
Affiliation:
Department of Physics and Astronomy, The University of Western Ontario London, Ontario, CanadaN6A 3K7
Ian V. Mitchell
Affiliation:
Department of Physics and Astronomy, The University of Western Ontario London, Ontario, CanadaN6A 3K7
Get access

Abstract

We report on the competitive phase separation of copper and tin thin film deposits on a pre–patterned Si(100) surface. The initial pattern on Si(100) was achieved through a thermal decomposition process of an ex–situ grown oxide film. Copper and tin phase separation on silicon is a competitive process with Cu forming preferrably silicide. Sn is observed to cover the silicide clusters when present in a sufficient amount. The pre–patterning of the surface introduces a new length scale in the problem. Our data suggest that this length scale plays a role while the clustering (ripening) length scale is of the same order, i.e., during nucleation and the early phase separation, but that both length scales become independent once the length scale of ripening significantly exceeds the length scale of the surface pattern.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 672: Symposium O – Mechanisms of Surface and Microstructure Evolution in Deposited Films and Film Structures , 2001 , O20.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Hu, Q., Mitchell, I.V. and Zinke-Allmang, M., Mat. Res. Soc. Symp. Proc., 580 (2000) 57.Google Scholar
[2] Rubloff, G.W., Hofmann, K., Liehr, M. and Young, D.R., Phys. Rev. Lett., 58 (1987) 2379.Google Scholar
[3] Reisman, A., Temple, D. and Smith, P.L., J. Electrochem. Soc., 137 (1990) 284.Google Scholar
[4] Agarwal, A.M. and Dunham, S.T., J. Electrochem. Soc., 140 (1993) 222.Google Scholar
[5] Griffith, J.E., Kochanski, G.P., Kubby, J.A. and Wienenga, P., J. Vac. Sci. & Technol., A 7 (1989) 1914.Google Scholar