The role of deposition condition on content and bond configurations of a–Si:H/μc–Si:H and a–Si:C:H doped films were investigated through IR spectra and correlated with transport properties. The microstructure, morphology, chemical composition and electro-optical properties were inferred from normal X–ray power diffraction, scanning electron microscopy (SEM), Rutherford Back Scattering (RBS), dark conductivity, visible and IR measurements.

The films under investigation were prepared in a Two Consecutive Decomposition and Deposition Chamber (TCDDC[1]) system under various deposition conditions such as: power density, dp; H2 partial pressure; substrate temperature, Ts; electromagnetic static fields (ξG and IB) with or without U.V. light assisting the process.Transition of a–Si:H to μc-Si:H (doped) films is accomplished by structure variation on bond configurations, hydrogen contents, CH, and transport properties. When oxygen is present during the deposition, films deposited with U.V. light assisting the process have O2 incorporated as Si=O while at high dp levels (without U.V. light) O2 appears in the matrix as Si–O bonds. Such behaviour is explained by changes on bond configurations and on the way how hydrogen is attached in the network.