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The Role of Oxygen in Zone-Melting Recrystallization of Silicon-On-Insulator Films

Published online by Cambridge University Press:  22 February 2011

John C. C. Fan ,
B-Y. Tsaur ,
C. K. Chen ,
J. R. Dick  and
L. L. Kazmerski
John C. C. Fan
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–0073;
B-Y. Tsaur
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–0073;
C. K. Chen
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–0073;
J. R. Dick
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
L. L. Kazmerski
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
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Abstract

Using secondary-ion mass spectroscopy, we have found that oxygen is strongly concentrated at the sub-boundaries in zone-melting-recrystallized silicon-on-insulator films prepared by the graphite-strip-heater technique. This observation suggests that the formation of sub-boundaries during recrystallization may be caused by constitutional supercooling resulting from the presence of oxygen that is dissolved into the molten Si zone from the adjacent SiO2 layers. Since all zone-melting-recrystallized films to date have been bordered by SiO2 layers, regardless of the heating techniques employed, the sub-boundaries almost always present in these films may well have dissolved oxygen as their common origin.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 477
Copyright
Copyright © Materials Research Society 1984

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References

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