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Role of Oxygen Adatoms in Homoepitaxial Growth of Cu(001)

Published online by Cambridge University Press:  10 February 2011

Masanori Yata ,
Herve Rouch  and
Keikichi Nakamura
Masanori Yata
Affiliation:
National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
Herve Rouch
Affiliation:
National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
Keikichi Nakamura
Affiliation:
Department of Physics, Zhejiang University, Hangzhou, People's Republic of, China
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Abstract

O atoms segregate to the surface during Cu homoepitaxial growth on Cu(001)-(2√2×√2)-O to retain the (2√2×√2) surface. The presence of an O adlayer on the Cu surface raises the barrier height for the surface diffusion of the Cu adatom and increases the transition temperature of the growth mode from step flow to layer by layer. The growth proceeds by site exchange between Cu adatoms and O atoms. The site-exchange rate competes with the Cu deposition rate. There exists a critical Cu deposition rate above which the O atoms can not exchange the sites with Cu adatoms. The critical Cu deposition rate obeys an Arrhenius relation and the active energy for the site-exchange is estimated at 0.66 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 528: Symposia AA – Mechanisms & Principals of Epitaxial Growth in Metallic Systems , 1998 , 59
Copyright
Copyright © Materials Research Society 1998

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