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The Role of Metal and Passivation Defects in Electromigration-Induced Damage in Thin Film Conductors

Published online by Cambridge University Press:  15 February 2011

J. R. Lloyd ,
P. M. Smith  and
G. S. Prokop
J. R. Lloyd
Affiliation:
IBM General Technology Division, Hopewell Junction, NY 12533 (U.S.A.)
P. M. Smith
Affiliation:
IBM General Technology Division, Hopewell Junction, NY 12533 (U.S.A.)
G. S. Prokop
Affiliation:
IBM General Technology Division, Hopewell Junction, NY 12533 (U.S.A.)
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Abstract

The effect of both metal defects (nicks and scratches) and passivation defects (Griffith cracks or pinholes) was theoretically and experimentally investigated. Flux divergences due to temperature and stress gradients are considered. It was observed that failure near a severe metal defect or at a defect in the passivation layer can be a major contributor to electromigration-induced lifetime degradation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 10: Symposium C – Thin Films and Interfaces I , 1981 , 397
Copyright
Copyright © Materials Research Society 1982

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References

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