Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-20T06:33:04.237Z Has data issue: false hasContentIssue false
  • English
  • Français

The Role of Hydrogen for Disordered Silicon

Published online by Cambridge University Press:  01 February 2011

N. H. Nickel
N. H. Nickel*
Affiliation:
Hahn-Meitner-Institut Berlin, Kekuléstr. 5, D-12489 Berlin, Germany.
Get access

Abstract

The properties of hydrogen in disordered silicon are of great interest due to its beneficial and deleterious aspects. This paper highlights some of the manifold properties of hydrogen in silicon. The influence of dopants on hydrogen diffusion in poly-Si, laser-induced dehydrogenation and crystallization of amorphous silicon, and hydrogen bonding in a-Si:H, poly-Si, and c-Si are reviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A1.5
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
[2] Nickel, N. H., Johnson, N. M., and Jackson, W. B., Phys. Rev. Lett. 71, 2733 (1993).Google Scholar
[3] Nickel, N. H., Johnson, N. M., and Walle, C. G. V. d., Phys. Rev. Lett. 72, 3393 (1994).Google Scholar
[4] Nickel, N. H. and Rakel, M., Phys. Rev. B 65, R041301 (2001).Google Scholar
[5] Nickel, N. H., Johnson, N. M., and Walle, C. G. Van de, Phys. Rev. Lett. 72, 3393 (1994).Google Scholar
[6] Gorelkinskii, Y. V. and Nevinnyi, N. N., Sov. Tech. Phys. Lett. 13, 45 (1987).Google Scholar
[7] Walle, C. G. Van de, Denteneer, P. J. H., Bar-Yam, Y., and Pantelides, S. T., Phys. Rev. B39, 10791 (1989).10.1103/PhysRevB.39.10791Google Scholar
[8] Mahan, A. H. and Vanecek, M., Proceedings of the International Meeting on Stability of Amorphous Silicon Materials and Solar Cells, edited by Stafford, B. (AIP Proceedings Vol. 234, Denver 1991), p. 195.Google Scholar
[9] Johnson, N. M., Nebel, C. E., Santos, P. V., Jackson, W. B., Street, R. A., Stevens, K. S., and Walker, J., Appl. Phys. Lett. 59, 1443 (1991).10.1063/1.105282Google Scholar
[10] Beyer, W., in Hydrogen in Semiconductors II, Vol. 61, Editor Nickel, N. H., Academic Press (San Diego 1999) p. 165.Google Scholar
[11] Jackson, W. B. and Tsai, C. C., Phys. Rev. B45, 6564 (1992). and references therein.10.1103/PhysRevB.45.6564Google Scholar
[12] Nickel, N. H. and Jackson, W. B., Phys. Rev. B51, 4872 (1995).10.1103/PhysRevB.51.4872Google Scholar
[13] Wu, Y., Stephen, J. T., Han, D. X., Rutland, J. M., Crandall, R. S., and Mahan, A. H., Phys. Rev. Lett. 77, 2049 (1996).10.1103/PhysRevLett.77.2049Google Scholar
[14] Santos, P. V. and Jackson, W. B., Phys. Rev. B46, 4595 (1992).10.1103/PhysRevB.46.4595Google Scholar
[15] Nickel, N. H., Jackson, W. B., and Walker, J., Phys. Rev. B53, 7750 (1996).10.1103/PhysRevB.53.7750Google Scholar
[16] Nickel, N. H. and Beckers, I. E. unpublished.Google Scholar
[17] Nickel, N. H., in Mass and Charge Transport in Inorganic Materials – Fundamentals to Devices, Vol. 29, Editors Vincenzini, P. and Buscaglia, V., Techna Srl 2000 p. 1303.Google Scholar
[18] Meyer, W. and Neldel, H., Z. Techn. Phys. 18, 588 (1937).Google Scholar
[19] Street, R. A., Tsai, C. C., Kakalios, J., and Jackson, W. B., Phil. Mag. B53, 305 (1987).10.1080/13642818708221319Google Scholar
[20] Beyer, W., Herion, J., and Wagner, H., J. Non-Cryst. Sol. 217-219, 217 (1989).10.1016/0022-3093(89)90117-8Google Scholar
[21] Jackson, W. B., Franz, A., Chabal, Y., Weldon, M. K., Jin, H.C., and Abelson, J. R., Mat. Res. Soc. Symp. Proc. 513, 381 (1998).Google Scholar
[22] Mei, P., Boyce, J. B., Hack, M., Lujan, R. A., Johnson, R. I., Anderson, G. B., Fork, D. K., and Ready, S. E., Appl. Phys. Lett. 64, 1132 (1994).Google Scholar
[23] Van de Walle, C. G., Phys. Rev. B49, 4579 (1994).10.1103/PhysRevB.49.4579Google Scholar
[24] Jackson, W. B. and Zhang, S. B., in Transport, Correlation and Structural Defects; Vol. C, edited by Fritzsche, H. (World Scientific, Singapore, 1990), p. 63.Google Scholar
[25] Chang, K. J. and Chadi, D. J., Phys. Rev. Lett. 62, 937 (1989).10.1103/PhysRevLett.62.937Google Scholar
[26] Mahan, A. H., Raboisson, P., Williamson, D. L., and Tsu, R., Solar Cells, 21, 117 (1987).10.1016/0379-6787(87)90110-4Google Scholar
[27] Stein, H. J., J. Electron. Mater. 4, 159 (1975).10.1007/BF02657842Google Scholar
[28] Deàk, P., Snyder, L. C., Heinrich, M., Ortiz, C. R., and Corbett, J. W., Physica B 170, 253 (1991).10.1016/0921-4526(91)90133-YGoogle Scholar
[29] Johnson, N. M., Herring, C., Doland, C., Walker, J., Anderson, G. B., and Ponce, F., Mat. Science Forum Vol. 83-87, 33 (1992).10.4028/www.scientific.net/MSF.83-87.33Google Scholar
[30] Johnson, N. M., Ponce, F. A., Street, R. A., and Nemanich, R. J., Phys. Rev. B35, 4166 (1987).Google Scholar
[31] Johnson, N. M., Herring, C., and Van de Walle, C. G., Phys. Rev. Lett. 73, 130 (1994).Google Scholar