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Role of Dislocation Interactions in Decreasing Mobile Threading Dislocation Density and Limiting Strain Relaxation in Si1-xGex Heteroepitaxial Films

Published online by Cambridge University Press:  21 February 2011

Veronique T Gillard  and
William D Nix
Veronique T Gillard
Affiliation:
Stanford University, Department of Materials Science and Engineering, Building 550, Stanford, CA 94305
William D Nix
Affiliation:
Stanford University, Department of Materials Science and Engineering, Building 550, Stanford, CA 94305
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Abstract

In situ substrate curvature measurements obtained during isothermal annealing of Si1-xGex films grown on (001) Si substrates allow determination of the evolution of strain versus time in these films. By coupling the strain relaxation measurements with previous measurements of dislocation velocities in this system, the mobile threading dislocation density and its evolution in the course of strain relaxation can be determined. The results indicate that in the late stage of strain relaxation, the mobile threading dislocation density decreases significantly. Results obtained with samples of two different sizes show that this decrease in mobile dislocation density is not primarily associated with dislocations running out at the edges of the film but with dislocation interactions impeding their further motion. Furthermore, for films thinner than 500 nm the residual strains after annealing are significantly higher than the values predicted by the equilibrium theory of misfit dislocations. The measured residual strains are compared with predictions based on Freund’s treatment of the blocking of a moving threading segment by an orthogonal misfit dislocation in its path. We find that the blocking criterion gives a very good account of the residual strain in Si1-xGex films and that blocking of threading dislocations by other misfit dislocations appears to play an important role in the late stage of strain relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 283
Copyright
Copyright © Materials Research Society 1995

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References

1. Fitzgerald, E. A., Watson, G. P., Proano, R. E., Ast, D. G., Kirchner, P. D., Pettit, G. D., and Woodall, J. M., J. Appl. Phys. 65, 2220 (1989).Google Scholar
2. Paine, D. C., Howard, D. J., Luo, D., Sacks, R. N., and Eschrich, T. C., Mat. Res. Soc. Symp. Proc. 160, 123 (1990).Google Scholar
3. Hull, R., Bean, J. C., Werder, D. J., and Leibenguth, R. E., Appl. Phys. Lett. 52, 1605 (1988).Google Scholar
4. Volkert, C. A., Fitzgerald, E, A., Hull, R., Xie, Y.-H, and Mii, Y.-J., Electronic Materials, J. 20, 833 (1991).Google Scholar
5. Hauenstein, R. J., Clemens, B. M., Miles, R. H., Marsh, O. J., Croke, E. T., and McGill, T. C., J. Vac. Sci. Technol. B 7, 767 (1989).Google Scholar
6. von Preissig, F. J., PhD thesis, Stanford University, 1991.Google Scholar
7. Nix, W. D., Met. Trans. A 20A, 2217 (1989).Google Scholar
8. Gillard, V. T., Noble, D. B., and Nix, W. D., Mat. Res. Soc. Symp. Proc. 308, 411 (1993).Google Scholar
9. Gillard, V. T., Nix, W. D., and Freund, L. B., to be published in: J. Appl. Phys. 76, (1994).Google Scholar
10. Freund, L. B., J. Appl. Mech. 54, 553 (1987).Google Scholar
11. Jain, S. C., Gosling, T. J., Willis, J. R., Totterdell, D. H. J., and Bullough, R., Phil. Mag. A 65, 1151 (1992).Google Scholar
12. Freund, L. B., J. Appl. Phys. 68, 2073 (1990).Google Scholar