Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-23T15:16:31.743Z Has data issue: false hasContentIssue false
  • English
  • Français

Role of Anode on Resistance Switching Phenomenon of Metal Oxide Resistive Random Access Memory

Published online by Cambridge University Press:  29 May 2015

Kentaro Kinoshita ,
Sang-Gyu Koh ,
Takumi Moriyama  and
Satoru Kishida
Kentaro Kinoshita
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan. Tottori Univ. Electronic Display Research Center, 522-2 Koyama-Kita, Tottori 680-0941, Japan.
Sang-Gyu Koh
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
Takumi Moriyama
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
Satoru Kishida
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan. Tottori Univ. Electronic Display Research Center, 522-2 Koyama-Kita, Tottori 680-0941, Japan.
Get access

Abstract

Although the presence of oxygen reservoir is assumed in many theoretical models which explain resistive switching of ReRAM with an electrode/metal oxide (MO)/electrode structure, the location of oxygen reservoir is not clear. We have previously reported a method for preparing an extremely small ReRAM cell which has removable bottom electrode (BE), by using AFM cantilever. In this study, we used this cell structure to specify the location of oxygen reservoir. Since an anode is assumed to work as an oxygen reservoir in most models, we investigated the effect of changing anodes for the same filament on the presence or absence of the occurrence of reset switching. It was revealed that reset occurred independently of catalytic ability and Gibbs free energy (ΔG) of anode material. However, reset was caused by repairing oxygen vacancies of which filament consists when metals with high ΔG is used as an anode, whereas by oxidizing an anode when metals with low ΔG is used as an anode. This result suggests that the MO film works as an oxygen reservoir for anode with high ΔG, whereas an anode works as an oxygen reservoir for anode with low ΔG.

Keywords

scanning probe microscopy (SPM)memoryelectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1805: Symposium SS/TT – Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications , 2015 , mrss15-2136151
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Kinoshita, K., Tamura, T., Aoki, M., Sugiyama, Y., and Tanaka, H.: Appl. Phys. Lett., 89 (2006) 103509.CrossRefGoogle Scholar
Kim, K. M., Choi, B. J., and Hwanga, C. S.: Appl. Phys. Lett., 90 (2007) 242906.CrossRefGoogle Scholar
Russo, U., Ielmini, D., Cagli, C., Lacaita, A. L., Spiga, S., Wiemer, C., Perego, M., and Fanciulli, M.: Tech. Dig. Int. Electron Devices Meet. 2007, p. 775.Google Scholar
Lee, M. J., Han, S., Jeon, S. H., Park, B. H., Kang, B. S., Ahn, S. E., Kim, K. H., Lee, C. B., Kim, C. J., Yoo, I. K., Seo, D. H., Li, X. S., Park, J. B., Lee, J. H., and Park, Y.: Nano Lett., 9 (2009) 1476.CrossRefGoogle Scholar
Akinaga, H. and Shima, H.: Proc. IEEE, 98 (2010) 2273.CrossRefGoogle Scholar
Yu, S. and Wong, H.-S. P., IEEE Electron Device IEEE Electron Device Lett., 31 (2010) 1455.CrossRefGoogle Scholar
Koh, S.-G., Kishida, S., and Kinoshita, K.: Appl. Phys. Lett., 104 (2014) 083518.CrossRefGoogle Scholar
Gland, J. L., Surf. Sci., 93 (1980) 487.CrossRefGoogle Scholar
Creighton, J.R. and White, J.M., Chemical Physics Letters, 94 (1982) 435.CrossRefGoogle Scholar
Strukov, D. B., Alibart, F., and Williams, R. S.: Appl. Phys.., A 107 (2012) 509.CrossRefGoogle Scholar