Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-05T10:26:42.456Z Has data issue: false hasContentIssue false
  • English
  • Français

Ripple Technique; a Novel Non-Contact Wafer Emissivity and Temperature Method for RTP

Published online by Cambridge University Press:  28 February 2011

C. Schietinger ,
B. Adams  and
C. Yarling
C. Schietinger
Affiliation:
Accufiber Division of Luxtron Corporation, 9550 SW Nimbus Avenue, Beaverton, OR 97005
B. Adams
Affiliation:
Accufiber Division of Luxtron Corporation, 9550 SW Nimbus Avenue, Beaverton, OR 97005
C. Yarling
Affiliation:
Process Products, 37 Flagship Drive, Andover, MA 01845
Get access

Abstract

A novel wafer temperature and emissivity measurement technique for rapid thermal processing (RTP) is presented. The ‘Ripple Technique’ takes advantage of heating lamp AC ripple as the signature of the reflected component of the radiation from the wafer surface. This application of Optical Fiber Thermometry (OFT) allows high speed measurement of wafer surface temperatures and emissivities. This ‘Ripple Technique’ is discussed in theoretical and practical terms with wafer data presented. Results of both temperature and emissivity measurements are presented for RTP conditions with bare silicon wafers and filmed wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 23
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Burggraff, P.S., Semiconductor International, 13 (9), 2 (1990).Google Scholar
2. Huntley, D., Solid State Technology, 33 (12), 85–89 (1990).Google Scholar
3. Saraswat, K.C., Moslehi, M.M., Grossman, D.D., Wood, S., Wright, S., Booth, L., in Single Wafer Rapid Thermal Multiprocessing, edited by Hodul, D., Gelpey, J.C., Green, M.L., and Seidel, T.E. (Mater. Res. Soc. Proc. 14) pp.3–13.Google Scholar
4. Roozeboom, F., Parekh, N., J. Vac. Sci. & Technol., B (1990).Google Scholar
5. Gelpey, J., Solid State Technol., 33 (9), 39–41 (1990).Google Scholar
6. Dils, R.R., Journal of Applied Physics, 5, 4, (1986).Google Scholar
7. Planck, M., Annals of Physics,4 (3), 553, (1901).Google Scholar
8. Tsutoma, S., Japanese Journal of Applied Physics, 6, 3 (March 1967).Google Scholar
9. Lee, M.C., “Noncontact Temperature Measurement”, NASA Office of Space Science and Application, April 30,1987 (unpublished).Google Scholar
10. Pettibone, D.W., Saarez, J.R., Gat, A., in The Effect of Thin Dielectric Films on the Accuracy of Pyrometric Temperature Measurement, 52, (1986).Google Scholar
11. Touloukian, Y.S., DeWitt, D.P., in Thermal Radiactive Properties Non-Metalic Solids, 8, (IFI/Plenum 1972).Google Scholar
12. Schietinger, C., presented at the RAPA Meeting, Palo Alto, CA, 1989 (unpublished).Google Scholar
13. Brixy, H., presented at VDI Seminar, Dusseldorf, Germany (BW 6031) 1984 (unpublished).Google Scholar
14. McLaren, E.H. and Murdock, E.G., presented at National Research Council (Canada), Monograph (NRCC 17407) 1979 (unpublished).Google Scholar