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Rheed Intensity Oscillation During Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Thin Films

Published online by Cambridge University Press:  26 February 2011

K. Yoshikawa  and
N. Sasaki
K. Yoshikawa
Affiliation:
Advanced Technology Division, Fujitsu Limited, Kawasaki, 211, Japan
N. Sasaki
Affiliation:
Advanced Technology Division, Fujitsu Limited, Kawasaki, 211, Japan
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Abstract

Using in-situ reflection high-energy electron diffraction (RHEED), we studied the growth of Bi-Sr-Ca-Cu-O (BSCCO) thin films prepared by reactive evaporation using layer-by-layer deposition. Bi2Sr2CaCu2Ox(2212) tends to be grown three-dimensionally if it is grown directly on (100) SrTiO3, in contrast to Bi2Sr2CuOx(2201) which is easily grown two-dimensionally on SrTiO3. Two-dimensional 2212 growth can be realized, if a buffer layer of 2201 is deposited on (100) SrTiO3 and growth interruption is utilized after SrO layer deposition. A buffer layer of only two 2201 unit cells improved the surface crystallinity of the substrate for the epitaxial growth of 2212. Growth interruption for two minutes after the 2nd SrO layer in the half unit cell is necessary to keep two-dimensional layered growth. The resulting Tc (zero) is 76 K and Jc (at 4.2 K) is 1.5 × 106 (A/cm2) with these epitaxial films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 275: Symposium S – Layered Superconductors: Fabrication, Properties and Applications , 1992 , 461
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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