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Revealing Mysteries of Hall Experiments on a-Si:H and a-SiC:H

Published online by Cambridge University Press:  01 January 1993

C. E. Nebel  and
R.A Street
C. E. Nebel
Affiliation:
Institut für Physikalische Elektronik, Universit ät Stuttgärt, Pfaffenwaldring 47. 7000 Stuttgart 80, Renthof 5, Germany.
R.A Street
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd.. Palo Alto, CA 94304.
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Abstract

Hall experiments performed on intrinsic, phosphorus and boron doped a-Si:H and a-SiC:H in the temperature regime 200 K ≤ T ≤400 K are introduced and discussed. The data confirm the double sign anomaly meaning the Hall coefficient is p-type on intrinsic and phosphorus doped a-Si:H and a-SiC:H, and n-type on boron doped a-Si:H. The Hall mobilities, μH, are significantly smaller than the drift mobilities, decreasing with increasing doping and/or carbon content. μH of holes is about half that for electron which indicate that μH scales approximately with 1/Eg where Eg is the tail slope. The presented interpretation of the Hall coefficient, that is introduced to be a function of Hall- and drift-mobility, enables the accurate determination of the carrier density in intrinsic and doped amorphous silicon and alloys from Hall data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 437
Copyright
Copyright © Materials Research Society 1993

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References

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