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Resistivity and Carrier Mobilities in Heavily Doped Polycrystalline Silicon Thin Films

Published online by Cambridge University Press:  22 February 2011

Dae M. Kim ,
Feng Qian ,
Charles U. Bickford  and
Simon Yu
Dae M. Kim
Affiliation:
Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, 19600 N.W. Von Neumann Drive, Beaverton, OR 97006
Feng Qian
Affiliation:
Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, 19600 N.W. Von Neumann Drive, Beaverton, OR 97006
Charles U. Bickford
Affiliation:
Tektronix Laboratories, Tektronix Inc., P.O. Box 500, Beaverton, OR 97077
Simon Yu
Affiliation:
Tektronix Laboratories, Tektronix Inc., P.O. Box 500, Beaverton, OR 97077
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Abstract

Electrical conduction data from heavily n and p-doped polysilicon thin films are presented. The sheet resistance in the range from 1 kΩ/□ to 100 Ω/□ is characterized over temperatures from 20°K to 450°K. It is shown that the polysilicon resistivity, larger than the corresponding crystalline value by a factor∼ 10 in the same doping range, is temperature insensitive. This larger resistivity is correlated to the degree of dopant activation and the mobility. The measured mobility varying from 8 to 20 cm 2/V.s is smaller than the corresponding crystalline value by a factor 10 ∼ 3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 261
Copyright
Copyright © Materials Research Society 1988

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References

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