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Residual Stresses in Co-Sputtered Films of Ta and Si on Substrates of Silicon and Oxide.

Published online by Cambridge University Press:  22 February 2011

C. C. Goldsmith ,
D. R. Campbell  and
S. Mader
C. C. Goldsmith
Affiliation:
IBM East Fishkill Facility, Hopewell Junction, NY, 12533;
D. R. Campbell
Affiliation:
IBM East Fishkill Facility, Hopewell Junction, NY, 12533;
S. Mader
Affiliation:
IBM T. J. Watson Res. Lab., Yorktown Heights NY, 10598
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Abstract

We have measured the stresses in TaSi. films both as a function of annealing temperature and of composition of the as-deposited films. Substrates of Si, polysilicon and SiO2 were used. The residual, room temperature stresses in samples annealed at 900°C are noticeably dependent on the initial Si/Ta ratio. This effect appears to to be related to microstructural differences between Si-rich and Ta-rich films. The stresses are largely due to the mismatch of thermal expansion coefficients (TEC) between the silicide and silicon although there is also evidence that samples annealed at lower temperatures (500°C) may have a sizable component of intrinsic stress as well. Despite tensile stresses as high as 1500 MPa, the x-ray topographs of Si wafers with patterned silicide/polysilicon structures show that no substrate dislocations are present after- annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 569
Copyright
Copyright © Materials Research Society 1984

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References

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