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Residual Ion Implantation Damage at Source/Drain Junctions of Excimer Laser Annealed Polycrystalline Silicon Thin Film Transistor

Published online by Cambridge University Press:  01 February 2011

Kee-Chan Park ,
Jae-Shin Kim ,
Woo-Jin Nam  and
Min-Koo Han
Kee-Chan Park
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, KOREA.
Jae-Shin Kim
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, KOREA.
Woo-Jin Nam
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, KOREA.
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, KOREA.
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Abstract

Residual ion implantation damage at source/drain junctions of excimer laser annealed polycrystalline silicon (poly-Si) thin film transistor (TFT) was investigated by high-resolution transmission electron microscopy (HR-TEM). Cross-sectional TEM observation showed that XeCl excimer laser (λ=308 nm) energy decreased considerably at the source/drain junctions of top-gated poly-Si TFT due to laser beam diffraction at the gate electrode edges and that the silicon layer amorphized by ion implantation, was not completely annealed at the juncions. The HR-TEM observation showed severe lattice disorder at the junctions of poly-Si TFT.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A7.6
Copyright
Copyright © Materials Research Society 2002

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