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Residual Donors in P-SiC Films

Published online by Cambridge University Press:  25 February 2011

W. E. Carlos ,
W. J. Moorea ,
P. G. Siebenmann ,
J. A. Freitas Jr. ,
R. Kaplan ,
S. G. Bishop ,
P. E. R. Nordquist Jr. ,
M. Kong  and
R. F. Davis
W. E. Carlos
Affiliation:
Naval Research Laboratory, Washington, DC.
W. J. Moorea
Affiliation:
Naval Research Laboratory, Washington, DC.
P. G. Siebenmann
Affiliation:
Naval Research Laboratory, Washington, DC.
J. A. Freitas Jr.
Affiliation:
Sachs/Freeman Associates, Landover, MD.
R. Kaplan
Affiliation:
Naval Research Laboratory, Washington, DC.
S. G. Bishop
Affiliation:
Naval Research Laboratory, Washington, DC.
P. E. R. Nordquist Jr.
Affiliation:
Naval Research Laboratory, Washington, DC.
M. Kong
Affiliation:
North Carolina State University, Raleigh, NC.
R. F. Davis
Affiliation:
North Carolina State University, Raleigh, NC.
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Abstract

Electron Spin Resonance (ESR), temperature dependent Hall effect measurements and photoluminesence (PL) are used to examine the assumption that the residual donor in β-SiC films is nitrogen. At low temperatures the ESR has a three line isotropic spectrum which is characteristic of a central hyperfine interaction with nitrogen. The temperature dependence of the intensity of the nitrogen ESR signal correlates with the concentration of un-ionized donors measured by the Hall effect. Donor-Acceptor pair PL spectra are used to establish that the binding energy of the dominant donor in the films is the same as the nitrogen donor observed in Lely-grown samples. Neither PL nor ESR provide any evidence for the presence of a shallower donor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 253
Copyright
Copyright © Materials Research Society 1987

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References

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