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Reproducible Electro-resistance Memory Effect in Ag/La0.67Sr0.33MnO3 Thin Films

Published online by Cambridge University Press:  01 February 2011

Lina Huang ,
Bingjun Qu  and
Litian Liu
Lina Huang
Affiliation:
[email protected], Institute of Microelectronics, Tsinghua University, Institute of Microelectronics, Tsinghua University, Institute of Microelectronics,, Tsinghua University,, District Haidian, Beijing, 100084, China, People's Republic of
Bingjun Qu
Affiliation:
[email protected], Institute of Microelectronics, Tsinghua University, Beijing, 100084, China, People's Republic of
Litian Liu
Affiliation:
[email protected], Institute of Microelectronics, Tsinghua University, Beijing, 100084, China, People's Republic of
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Abstract

The hysteretic and reproducible electro-resistance memory effect has been investigated in epitaxial La0.67Sr0.33MnO3 (LSMO) films under DC-bias stress and voltage pulses. The bias-sensitive current-voltage characteristic of the Ag/LSMO system is distinctly nonlinear, asymmetric and hysteretic, which indicates the appearance of the resistive switching. The diffusive resistance transition, which occurred during the field increase/decrease processes, is likely ascribed to a large intrasystem charge transfer for the electronic inhomogeneous heterostructure. The pulsed voltage amplitude and duration dependence of the nonvolatile resistive switch were also provided. Clear resistance switching cycles were observed at room temperature under voltage pulses of ±5V and ∼150ns. Reproducible switching properties, involving voltage-induced stepwise resistance change, resistance state saturation, and pulse duration dependent multilevel switchable capability, demonstrate well controllability with respect to future nonvolatile random access memory applications.

Keywords

thin filmelectrical propertiesmemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1071: Symposium F – Materials Science and Technology for Nonvolatile Memories , 2008 , 1071-F09-12
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Liu, S. Q. Wu, N. J. and Ignatiev, A. Applied Physics Letters 76 (19), 2749–2751 (2000).Google Scholar
2. Baikalov, A. Wang, Y. Q. Shen, B. Lorenz, B. Tsui, S. Sun, Y. Y. and Xue, Y. Y. Applied Physics Letters 83 (5), 957–959 (2003).Google Scholar
3. Sawa, A. Fujii, T. Kawasaki, M. and Tokura, Y. Applied Physics Letters 85 (18), 4073–4075 (2004).Google Scholar
4. Tsui, S. Baikalov, A. Cmaidalka, J. Sun, Y. Y. Wang, Y. Q. Xue, Y. Y. Chu, C. W. Chen, L. and Jacobson, A. J. Applied Physics Letters 85 (2), 317–319 (2004).Google Scholar
5. Choi, Dooho, Lee, Dongsoo, Sim, Hyunjun, Chang, Man and Hwang, Hyunsang, Applied Physics Letters 88, 082904 (2006).Google Scholar
6. Choi, B. J. Jeong, D. S. Kim, S. K. Rohde, C. Choi, S. Oh, J. H. Kim, H. J. Hwang, C. S. Szot, K. Waser, R. Reichenberg, B. and Tiedke, S. Journal of Applied Physics 98, 033715 (2005).Google Scholar
7. Yang, Min Kyu, Kim, Dal-Young, Park, Jae-Wan and Lee, Jeon-Kook, Journal of the Korean Physical Society 47, S313–S316 (2005).Google Scholar
8. Lee, Dongsoo, Choi, Hyejung, Sim, Hyunjun, Choi, Dooho, Hwang, Hyunsang, Lee, Myoung-Jae, Seo, Sun-Ae and Yoo, I. K. IEEE Electron Device Letters 10.1109/LED.2005.854397 (2005).Google Scholar
9. Seo, S. Lee, M. J. Seo, D. H. Choi, S. K. Suh, D. S. Joung, Y. S. Yoo, I. K. Byun, I. S. Hwang, I. R. Kim, S. H. and Park, B. H. Applied Physics Letters 86, 093509 (2005).Google Scholar
10. Seo, S. Lee, M. J. Kim, D. C. Ahn, S. E. Park, B. H. Kim, Y. S. Yoo, I. K. Byun, I. S. Hwang, I. R. Kim, S. H. Kim, J. S. Choi, J. S. Lee, J. H. Jeon, S. H. and Hong, S. H. Applied Physics Letters 87, 263507 (2005).Google Scholar
11. Park, Jae-Wan, Park, Jong-Wan, Kim, Dal-Young and Lee, Jeon-Kook, Journal of Vacuum Science Technology A 23 (5), 1309–1313 (2005).Google Scholar
12. Zhuang, W. W. Pan, W. Ulrich, B. D. Lee, J. J. Stecher, L. Burmaster, A. Evans, D. R. Hsu, S. T. Tajiri, M. Shimaoka, A. Inoue, K. Naka, T. Awaya, N. Sakiyama, K. Wang, Y. Liu, S. Q. Wu, N. J. and Ignatiev, A. IEEE International Electron Device Meeting, 193-196 (2002).Google Scholar
13. Odagawa, A. Kanno, T. Adachi, H. Sato, H. Inoue, I. H. Akoh, H. Kawasaki, M. and Tokura, Y. Thin solid films 486, 75–78 (2005).Google Scholar
14. Sakai, Joe and Imai, Syozo, Journal of Applied Physics 97, 10H709 (2005).Google Scholar
15. Rozenberg, M. J. Inoue, I. H. Sanchez, M. J. Applied Physics Letters 88, 033510 (2006).Google Scholar
16. Chen, Tong Lai, Li, Xiao Min, Dong, Rui, Wang, Qun, Chen, Li Dong, Thin solid films 488, 98–102 (2005).Google Scholar
17. Fujii, T. Kawasaki, M. Sawa, A. Akoh, H. Kawazoe, Y. and Tokura, Y. Applied Physics Letters 86, 012107 (2005).Google Scholar